WSD2090DN56 Datasheet and Replacement
   Type Designator: WSD2090DN56
   Type of Transistor: MOSFET
   Type of Control Channel: N
 -Channel   
Pd ⓘ
 - Maximum Power Dissipation: 81
 W   
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
 V   
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12
 V   
|Id| ⓘ - Maximum Drain Current: 80
 A   
Tj ⓘ - Maximum Junction Temperature: 175
 °C   
tr ⓘ - Rise Time: 37
 nS   
Cossⓘ - 
Output Capacitance: 460
 pF   
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.004
 Ohm
		   Package: 
DFN5X6-8
				
				  
				 
   - 
MOSFET ⓘ Cross-Reference Search
 
		
WSD2090DN56 Datasheet (PDF)
 ..1.  Size:2053K  winsok
 wsd2090dn56.pdf 
 
						  
 
WSD2090DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD2090DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 2.8m 80Agate charge for most of the synchronous buck converter applications . Applications The WSD2090DN56 meet the RoHS and Green Product requirement 100% EAS guar
 8.1.  Size:691K  winsok
 wsd2098.pdf 
 
						  
 
WSD2098Dual N-Ch MOSFETGeneral Description Product SummeryThe WSD2098 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , 7.0mwhich provide excellent RDSON and gate charge 20V 9.7Afor most of the small power switching and load switch applications. Applications The WSD2098 meet the RoHS and Green   Power Management in Notebook
 9.1.  Size:1808K  winsok
 wsd2018adn22.pdf 
 
						  
 
WSD2018ADN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018ADN22 is the highestBVDSS RDSON ID performance trench N-Ch MOSFET withextreme high cell density , which provide20V 9.5m 11Aexcellent RDSON and gate charge for most ofthe small power switching and load switchApplications applications.The WSD2018ADN22 meet the RoHS and  High Frequency Point-of-Load S
 9.2.  Size:1030K  winsok
 wsd20l120dn56.pdf 
 
						  
 
WSD20L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120Acharge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and   High Frequency Point-of-Load Sy
 9.3.  Size:2643K  winsok
 wsd2018dn22.pdf 
 
						  
 
WSD2018DN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 15m(MAX) 12Agate charge for most of the small power switching and load switch applications. Applications The WSD2018DN22 meet the RoHS and Green Product requirement 
 9.4.  Size:729K  winsok
 wsd2068.pdf 
 
						  
 
WSD2068Dual N-Ch MOSFETGeneral Description Product SummeryThe WSD2068 is the highest performance trench RDSON BVDSS ID N-ch MOSFETs with extreme high cell density , 15.5m 7.5Awhich provide excellent RDSON and gate 20Vcharge for most of the small power switching and load switch applications. Applications The WSD2068 meet the RoHS and Green   Power Management in Noteb
 9.5.  Size:615K  winsok
 wsd2054dn22.pdf 
 
						  
 
WSD2054DN22 Dual N-Ch MOSFETGeneral Description Product SummeryThe WSD2054DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 5A20V 50mgate charge for most of the small power switching and load switch applications. Applications The WSD2054DN22 meet the RoHS and Green Product requirement
 9.6.  Size:624K  winsok
 wsd20l70dn.pdf 
 
						  
 
WSD20L70DNP-Ch MOSFETGeneral Description  Product SummeryThe WSD20L70DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -20V 6.7m -70Agate charge for most of the synchronous buck converter applications . Applications The WSD20L70DN meet the RoHS and Green Product requirement 100% EAS gu
 9.7.  Size:789K  winsok
 wsd20l75dn.pdf 
 
						  
 
WSD20L75DNP-Ch MOSFET Product SummeryGeneral Description Description The WSD20L75DN uses advanced BVDSS RDSON ID trench technology and design to provide excellent RDS(ON) with low gate charge. It can be -20V 4.8m -75Aused in a wide variety of applications. Applications   Load switch Features   Battery protection High density cell design for ultra low RdsonDFN3X
 9.8.  Size:1043K  winsok
 wsd20l50dn.pdf 
 
						  
 
WSD20L50DNP-Ch MOSFETGeneral Description  Product SummeryThe WSD20L50DN is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and -20V 9.0m -50Agate charge for most of the synchronous buck converter applications . Applications The WSD20L50DN meet the RoHS and Green Product requirement 100% EAS   
 9.9.  Size:2306K  winsok
 wsd2075dn.pdf 
 
						  
 
WSD2075DNDual P-Ch MOSFET Product SummeryGeneral Description The WSD2075DN is the highest performance BVDSS RDSON ID trench Dual P-ch MOSFETs with extreme high cell density , which provide excellent RDSON -20V 9.5m -36Aand gate charge for most of the synchronous buck converter applications . Applications The WSD2075DN meet the RoHS and Green Product requirement 100%
 9.10.  Size:1316K  winsok
 wsd2012dn25.pdf 
 
						  
 
WSD2012DN25N-Ch MOSFETGeneral Description Product SummeryThe WSD2012DN25 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 9.5m(max)density , which provide excellent RDSON and gate 20V 11Acharge for most of the small power switching and load switch applications. Applications The WSD2012DN25 meet the RoHS and Green   Power management 
 9.11.  Size:2838K  winsok
 wsd2050dn.pdf 
 
						  
 
WSD2050DNN-Ch MOSFETGeneral Description Product SummeryThe WSD2050DN is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 8.2m 20V 40A gate charge for most of the synchronous buck converter applications . Applications The WSD2050DN meet the RoHS and Green Product requirement , 100% EAS   Hi
 9.12.  Size:1786K  winsok
 wsd2018bdn22.pdf 
 
						  
 
WSD2018BDN22N-Ch MOSFETGeneral Description Product SummeryThe WSD2018BDN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 12V 11.5m(MAX) 12.3Aexcellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSD2018BDN22 meet the RoHS and Green Product req
Datasheet: WSD2012DN25
, WSD2018ADN22
, WSD2018BDN22
, WSD2018DN22
, WSD2050DN
, WSD2054DN22
, WSD2068
, WSD2075DN
, RFP50N06
, WSD2098
, WSD20L120DN56
, WSD20L50DN
, WSD20L70DN
, WSD20L75DN
, WSD30100DN56
, WSD30140DN56
, WSD30150DN56
. 
Keywords - WSD2090DN56 MOSFET datasheet
 WSD2090DN56 cross reference
 WSD2090DN56 equivalent finder
 WSD2090DN56 lookup
 WSD2090DN56 substitution
 WSD2090DN56 replacement
 
 
