WSD30160DN56 MOSFET. Datasheet pdf. Equivalent

   Type Designator: WSD30160DN56
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 62.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 120 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 38 nC
   trⓘ - Rise Time: 23 nS
   Cossⓘ - Output Capacitance: 1180 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0025 Ohm
   Package: DFN5X6-8

WSD30160DN56 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

BUY TRANSISTORS