WSD30L120DN56
MOSFET. Datasheet pdf. Equivalent
Type Designator: WSD30L120DN56
Type of Transistor: MOSFET
Type of Control Channel: P
-Channel
Pdⓘ
- Maximum Power Dissipation: 78
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 120
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 135
nC
trⓘ - Rise Time: 25
nS
Cossⓘ -
Output Capacitance: 1130
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0036
Ohm
Package:
DFN5X6-8
WSD30L120DN56
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSD30L120DN56
Datasheet (PDF)
..1. Size:919K winsok
wsd30l120dn56.pdf 
WSD30L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 3.6m -120Acharge for most of the synchronous buck converter applications . Applications The WSD30L120DN56 meet the RoHS and Green High Frequency Point-of-L
8.1. Size:1410K winsok
wsd30l20dn.pdf
WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast
8.2. Size:611K winsok
wsd30l90dn56.pdf
WSD30L90DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L90DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 6.4m -90Acharge for most of the synchronous buck converter applications . Applications The WSD30L90DN56 meet the RoHS and Green High Frequency Point-of-Load
8.3. Size:821K winsok
wsd30l30dn.pdf
WSD30L30DNP-Ch MOSFETGeneral Description Product SummeryThe WSD30L30DN is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 15m -32Agate charge for most of the synchronous buck converter applications . Applications The WSD30L30DN meet the RoHS and Green Product requirement , 100% EAS guara
8.4. Size:733K winsok
wsd30l60dn56.pdf
WSD30L60DN56P-Ch MOSFET Product SummeryFeatures -30V/-45A,RDS(ON) = 12m (max.) @ VGS =-10VRDS(ON) = 17m (max.) @ VGS =-6VRDS(ON) = 21m (max.) @ VGS =-4.5V Reliable and Rugged Lead Free and Green Devices AvailableDFN5X6A-8_EP (RoHS Compliant)Applications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.Absolute Maximum Ratings (T
8.5. Size:801K winsok
wsd30l40dn.pdf
WSD30L40DNP-Ch MOSFETGeneral Description Product SummeryThe WSD30L40DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -30V 11m -40Agate charge for most of the synchronous buck converter applications . Applications The WSD30L40DN meet the RoHS and Green Product requirement 100% EAS gua
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