WSD30L20DN MOSFET. Datasheet pdf. Equivalent
Type Designator: WSD30L20DN
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 16.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 19 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 140 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
Package: DFN3X3-8-EP
WSD30L20DN Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WSD30L20DN Datasheet (PDF)
wsd30l20dn.pdf
WSD30L20DNP-Ch MOSFET Product SummeryDescriptionThe WSD30L20DN uses advanced trench technology to VDS RDS(ON) IDprovide excellent RDS(ON), low gate charge and -30 18m -20Aoperation with gate voltages as low as 4.5V.This device Applicationis suitable for use as a Battery protection or in other Lithium battery protectionSwitching application Wireless impact Mobile phone fast
wsd30l90dn56.pdf
WSD30L90DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L90DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 6.4m -90Acharge for most of the synchronous buck converter applications . Applications The WSD30L90DN56 meet the RoHS and Green High Frequency Point-of-Load
wsd30l120dn56.pdf
WSD30L120DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD30L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -30V 3.6m -120Acharge for most of the synchronous buck converter applications . Applications The WSD30L120DN56 meet the RoHS and Green High Frequency Point-of-L
wsd30l30dn.pdf
WSD30L30DNP-Ch MOSFETGeneral Description Product SummeryThe WSD30L30DN is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 15m -32Agate charge for most of the synchronous buck converter applications . Applications The WSD30L30DN meet the RoHS and Green Product requirement , 100% EAS guara
wsd30l60dn56.pdf
WSD30L60DN56P-Ch MOSFET Product SummeryFeatures -30V/-45A,RDS(ON) = 12m (max.) @ VGS =-10VRDS(ON) = 17m (max.) @ VGS =-6VRDS(ON) = 21m (max.) @ VGS =-4.5V Reliable and Rugged Lead Free and Green Devices AvailableDFN5X6A-8_EP (RoHS Compliant)Applications Power Management in Notebook Computer,Portable Equipment and Battery PoweredSystems.Absolute Maximum Ratings (T
wsd30l40dn.pdf
WSD30L40DNP-Ch MOSFETGeneral Description Product SummeryThe WSD30L40DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -30V 11m -40Agate charge for most of the synchronous buck converter applications . Applications The WSD30L40DN meet the RoHS and Green Product requirement 100% EAS gua
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