WSE3088 PDF and Equivalents Search

 

WSE3088 Specs and Replacement

Type Designator: WSE3088

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.8 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12.5 nS

Cossⓘ - Output Capacitance: 80 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm

Package: SOT89

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WSE3088 datasheet

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WSE3088

WSE3088 N-Ch MOSFET General Description Product Summery The WSE3088 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 23m 7A for most of the synchronous buck converter applications . Applications The WSE3088 meet the RoHS and Green High Frequency Point-of-Load Synchronous s P... See More ⇒

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WSE3088

WSE3099 P-Ch MOSFET General Description Product Summery The WSP3099 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 53m -5.0A for most of the synchronous buck converter applications . Applications The WSP3099 meet the RoHS and Green Product requirement with full function reli... See More ⇒

Detailed specifications: WSD50P10DN56, WSD6040DN56, WSD6056DN56, WSD60N10GDN56, WSD75100DN56, WSD80100DN56, WSD80120DN56, WSD90P06DN56, IRF640N, WSE3099, WSE9968, WSE9968A, WSF07N10, WSF07N20, WSF09N20, WSF09N20G, WSF10N40

Keywords - WSE3088 MOSFET specs

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