WSE3088 Datasheet and Replacement
Type Designator: WSE3088
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.8 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 12.5 nS
Cossⓘ - Output Capacitance: 80 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: SOT89
WSE3088 substitution
WSE3088 Datasheet (PDF)
wse3088.pdf

WSE3088 N-Ch MOSFETGeneral Description Product SummeryThe WSE3088 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 23m 7Afor most of the synchronous buck converter applications .Applications The WSE3088 meet the RoHS and Green High Frequency Point-of-Load Synchronous s P
wse3099.pdf

WSE3099 P-Ch MOSFETGeneral Description Product SummeryThe WSP3099 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 53m -5.0Afor most of the synchronous buck converter applications . Applications The WSP3099 meet the RoHS and Green Product requirement with full function reli
Datasheet: WSD50P10DN56 , WSD6040DN56 , WSD6056DN56 , WSD60N10GDN56 , WSD75100DN56 , WSD80100DN56 , WSD80120DN56 , WSD90P06DN56 , IRF630 , WSE3099 , WSE9968 , WSE9968A , WSF07N10 , WSF07N20 , WSF09N20 , WSF09N20G , WSF10N40 .
Keywords - WSE3088 MOSFET datasheet
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