All MOSFET. 2N7002DW Datasheet

 

2N7002DW MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7002DW

SMD Transistor Code: K72

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.2 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.115 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 7.5 Ohm

Package: SC70

2N7002DW Transistor Equivalent Substitute - MOSFET Cross-Reference Search

2N7002DW Datasheet (PDF)

1.1. am2n7002dw.pdf Size:454K _upd-mosfet

2N7002DW
2N7002DW

AiT Semiconductor Inc. AM2N7002DW www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-363 package.  ESD Protected: 1000V  Available in SOT-363 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-363 AM2N7002DWC6R C6 (SC70-6) AM2N7002DWC6VR V: Halogen free Package Note R: Tape & Reel SPQ:

1.2. l2n7002dw1t1g.pdf Size:296K _update_mosfet

2N7002DW
2N7002DW

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mAmps,60 Volts L2N7002DW1T1G N–Channel SC-88 • Pb-Free Package is Available. • ESD Protected:1000V MAXIMUM RATINGS Rating Symbol Value Unit 3 2 1 Drain-Source Voltage VDSS 60 Vdc D2 G1 S1 Drain-Gate Voltage (RGS = 1.0 MW) VDGR 60 Vdc Drain Current ID ±115 mAdc ID ±75 - Continuous TC = 25°C (Note 1) IDM ±800 - Continuo

 1.3. 2n7002dw.pdf Size:257K _fairchild_semi

2N7002DW
2N7002DW

October 2007 2N7002DW N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant SC70-6 (SOT363) 1 1 Marking : 2N Absolute Maximum Ratings * Ta = 25C unless otherwise noted

1.4. 2n7002dw.pdf Size:84K _diodes

2N7002DW
2N7002DW

2N7002DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-363 Low On-Resistance Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminals: Matte Tin Finish an

 1.5. 2n7002dw.pdf Size:285K _utc

2N7002DW
2N7002DW

UNISONIC TECHNOLOGIES CO., LTD 2N7002DW Power MOSFET 300mA, 60V DUAL N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002DW uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Contr

1.6. s2n7002dw.pdf Size:247K _secos

2N7002DW
2N7002DW

S2N7002DW 115mA, 60V Dual N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-363 MECHANICAL DATA ? Case: SOT-363,Molded Plastic. ? Case Material-UL Flammability Rating 94V-0 ? Terminals: Solderable per MIL-STD-202, Method 208 ? Weight: 0.006 grams(approx.) DEVICE MARKING: 702 PACKAGE INFORMATION Pa

1.7. 2n7002dw.pdf Size:212K _wietron

2N7002DW
2N7002DW

2N7002DW Dual N-Channel MOSFET 6 5 4 1 2 3 Features: * We declare that the material of product are Halogen Free and SOT-363(SC-88) compliance with RoHS requirements. * ESD Protected:1000V 3 2 1 D2 G1 S1 S2 G2 D1 4 5 6 Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Drain-Gate Voltage RGS<1.0M? _ VDGR 60 V Gate-Sour

1.8. 2n7002dw1t1.pdf Size:375K _willas

2N7002DW
2N7002DW

FM120-M WILLAS THRU 2N7002DW1T1 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V Small Signal MOSFET 115 mAmps,60 Volts SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers N–Channel SOT-363 better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted applic

1.9. 2n7002dw.pdf Size:1367K _kexin

2N7002DW
2N7002DW

SMD Type MOSFET Dual N-Channel MOSFET 2N7002DW ■ Features ● VDS (V) = 60V ● ID = 115 mA (VGS = 10V) ● RDS(ON) < 7.5 Ω (VGS = 5V) ● Low Input Capacitance ● Fast Switching Speed ● Low On-Resistance 1.S2 4.S1 2.G2 5.G1 3.D1 6.D2 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 Drain-Gate Voltage @ RGS ≤ 1M

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