All MOSFET. 2N7002KW Datasheet


2N7002KW MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7002KW

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.3 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.1 V

Maximum Drain Current |Id|: 0.31 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 1.6 Ohm

Package: SOT323

2N7002KW Transistor Equivalent Substitute - MOSFET Cross-Reference Search


2N7002KW Datasheet (PDF)

1.1. 2n7002kw.pdf Size:286K _fairchild_semi


May 2011 2N7002KW N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant ESD HBM=1000V as per JESD22 A114 and ESD CDM=1500V as per JESD22 C101 D S SOT-323 G Marking : 7KW Absolute Maximum Rati

1.2. s2n7002kw.pdf Size:536K _secos


S2N7002KW 115mA, 60V N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES Low on-resistance Fast switching Speed A L Low-voltage drive 3 3 Easily designed drive circuits Top View C B 1 1 2 ESD protected:1500V 2 K E D H J F G Millimeter Millimeter REF. REF. Min

 1.3. 2n7002kw.pdf Size:527K _secos


2N7002KW 115mA , 60V, RDS(ON) 4 ? N-Ch Small Signal MOSFET with ESD Protection Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES SOT-323 ? RDS(ON), VGS@10V, IDS@500mA=3? ? RDS(ON), VGS@4.5V, IDS@200mA=4? A ? Advanced Trench Process Technology L ? High Density Cell Design For Ultra Low On-Resistance 3 3 ? Very Lo

Datasheet: ZVP3310F , ZVP4105A , ZVP4424A , ZVP4424G , 2N7000BU , 2N7000TA , 2N7002DW , 2N7002K , BUZ90A , 2N7002MTF , 2N7002T , 2N7002V , 2N7002VA , 2N7002W , BSS138K , BSS138W , FCA16N60N .


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