WSF50P10 PDF and Equivalents Search

 

WSF50P10 Specs and Replacement

Type Designator: WSF50P10

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 96 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 34 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9 nS

Cossⓘ - Output Capacitance: 268 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO252

WSF50P10 substitution

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WSF50P10 datasheet

 ..1. Size:2184K  winsok
wsf50p10.pdf pdf_icon

WSF50P10

WSF50P10 P-Ch MOSFET General Description Product Summery The WSF50P10 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -100V 40m -34A gate charge for most of the synchronous buck converter applications . Applications The WSF50P10 meet the RoHS and Green Power Management for Industrial DC / DC... See More ⇒

 8.1. Size:1048K  winsok
wsf50p04.pdf pdf_icon

WSF50P10

WSF50P04 P-Ch MOSFET General Description Product Summery The WSF50P04 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON -40V 12m -40A and gate charge for most of the synchronous buck converter applications . Applications The WSF50P04 meet the RoHS and Green High Frequency Point-of-Load Synchro... See More ⇒

 9.1. Size:1433K  winsok
wsf50n10g.pdf pdf_icon

WSF50P10

WSF50N10G N-Ch MOSFET Description Product Summery The uses advanced SGT technology BVDSS RDSON ID to provide excellent RDS(ON), low gate charge and 100V 40A 13.8m operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or TO-252 Pin Configuration in other Switching application. Application Consumer electronic power supply Motor ... See More ⇒

 9.2. Size:622K  winsok
wsf50n10.pdf pdf_icon

WSF50P10

WSF50N10 N-Ch MOSFET General Description Product Summery The WSF50N10 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 100V 22m 50A gate charge for most of the synchronous buck converter applications . Applications The WSF50N10 meet the RoHS and Green High Frequency Point-of-Load Synchronous... See More ⇒

Detailed specifications: WSF40P03, WSF40P04, WSF40P06, WSF45P06, WSF45P10, WSF50N10, WSF50N10G, WSF50P04, RFP50N06, WSF60100, WSF6012, WSF60N06, WSF70N10, WSF70P03, WSF80N06H, WSF90P03, WSG02N20

Keywords - WSF50P10 MOSFET specs

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