All MOSFET. 2N7002VA Datasheet

 

2N7002VA MOSFET. Datasheet pdf. Equivalent

Type Designator: 2N7002VA

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.25 W

Maximum Drain-Source Voltage |Vds|: 60 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Drain Current |Id|: 0.28 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 7.5 Ohm

Package: SOT563F

2N7002VA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

2N7002VA Datasheet (PDF)

3.1. 2n7002vgp.pdf Size:166K _update-mosfet

2N7002VA
2N7002VA

CHENMKO ENTERPRISE CO.,LTD 2N7002VGP SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.280 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE SOT-563 * Small surface mounting type. (SOT-563) * High density cell design for low RDS(ON) * Suitable for high packing density. (1) (S1) (D1)(6) * Rug

3.2. 2n7002v-va.pdf Size:506K _fairchild_semi

2N7002VA
2N7002VA

April 2010 2N7002V/VA N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Pin4) SOT-563F Marking : AB Marking : AC * Pin1 and Pin4 are exchangeable. Absolu

 3.3. 2n7002vc-vac.pdf Size:124K _diodes

2N7002VA
2N7002VA

2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance Terminal Connections: Se

Datasheet: 2N7000BU , 2N7000TA , 2N7002DW , 2N7002K , 2N7002KW , 2N7002MTF , 2N7002T , 2N7002V , 2SK105 , 2N7002W , BSS138K , BSS138W , FCA16N60N , IRF220 , FCA20N60F , IRF221 , FCA22N60N .

 

 
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