All MOSFET. WSP4407 Datasheet

 

WSP4407 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSP4407
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 13 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Total Gate Charge (Qg): 31 nC
   Rise Time (tr): 15 nS
   Drain-Source Capacitance (Cd): 315 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.012 Ohm
   Package: SOP8

 WSP4407 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSP4407 Datasheet (PDF)

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wsp4407.pdf

WSP4407
WSP4407

WSP4407 P-Ch MOSFETGeneral Description Product SummeryThe WSP4407 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -30V 9.6m -13Afor most of the synchronous buck converter applications . Applications The WSP4407 meet the RoHS and Green Product requirement , 100% EAS guaranteed

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wsp4407a.pdf

WSP4407
WSP4407

WSP4407AP-Ch MOSFETGeneral Description Product SummeryThe WSP4407A is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and -30V 12m -11Agate charge for most of the synchronous buck converter applications . Applications The WSP4407A meet the RoHS and Green Product requirement , 100% EAS guaranteed

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wsp4409a.pdf

WSP4407
WSP4407

WSP4409A P-Ch MOSFETGeneral Description Product SummeryThe WSP4409A is the highest BVDSS RDSON ID performance trench P-Ch MOSFET with extreme high cell density , which provide -15A-30V 8.0mexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4409A meet the RoHS and Power Management in Notebook Computer,

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wsp4409.pdf

WSP4407
WSP4407

WSP4409 P-Ch MOSFETGeneral Description Product SummeryThe WSP4409 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density , which provide excellent -17.6A-30V 5.0mRDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4409 meet the RoHS and Green Product requirement , 100% EAS Pow

 8.3. Size:872K  winsok
wsp4406.pdf

WSP4407
WSP4407

WSP4406 N-Ch MOSFETGeneral Description Product SummeryThe WSP4406 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent 30V 9.5m 12ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSP4406 meet the RoHS and Green Product requirement 100% EAS High Frequency

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , RFP50N06 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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