All MOSFET. BSS138K Datasheet

 

BSS138K MOSFET. Datasheet pdf. Equivalent

Type Designator: BSS138K

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.35 W

Maximum Drain-Source Voltage |Vds|: 50 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 1.2 V

Maximum Drain Current |Id|: 0.22 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 2.5 Ohm

Package: SOT23

BSS138K Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BSS138K Datasheet (PDF)

1.1. bss138k.pdf Size:288K _fairchild_semi

BSS138K
BSS138K

May 2010 BSS138K N-Channel Logic Level Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Pb Free/RoHS Compliant Green Compound ESD HBM=2000V as per JEDEC A114A ; ESD CDM = 2000V as per JEDEC C101C D S G SOT - 23 Markin

4.1. bss138bks.pdf Size:348K _update-mosfet

BSS138K
BSS138K

BSS138BKS 60 V, 320 mA dual N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Logic-level compatible  ESD protection up t

4.2. bss138-g.pdf Size:130K _update-mosfet

BSS138K
BSS138K

MOSFET BSS138-G N-Channel 50-V(D-S) MOSFET RoHS Device Features 1 : Gate SOT-23 -High density cell design for extremely low RDS(ON). 2 : Source 3 : Drain -Rugged and Reliable. 0.118(3.00) 0.110(2.80) 3 0.055(1.40) 0.047(1.20) Mechanical data 1 2 -Case: SOT-23, molded plastic. 0.079(2.00) 0.071(1.80) -Terminals: solderable per MIL-STD-750, 0.006(0.15) method 2026. 0.

 4.3. bss138 d87z bss138 l99z.pdf Size:99K _update-mosfet

BSS138K
BSS138K

 October 2005 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect • 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, RDS(ON) = 6.0Ω @ VGS = 4.5 V high cell density, DMOS technology. These products have been designed to minimize

4.4. bss138ta bss138tc.pdf Size:98K _update-mosfet

BSS138K
BSS138K

BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • Low On-Resistance • Case: SOT23 • Low Gate Threshold Voltage • Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 • Low Input Capacitance • Moisture Sensitivity: Level 1 per J-STD-020 • Fast Switching Speed • Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

 4.5. bss138aka.pdf Size:247K _update-mosfet

BSS138K
BSS138K

BSS138AKA 60 V, single N-channel Trench MOSFET 29 April 2015 Product data sheet 1. General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 2. Features and benefits • Very fast switching • Trench MOSFET technology • ESD protection • Low threshold voltag

4.6. bss138lt3 bss138lt3g.pdf Size:95K _update-mosfet

BSS138K
BSS138K

BSS138LT1 Power MOSFET 200 mA, 50 V N-Channel SOT-23 Typical applications are DC-DC converters, power management in http://onsemi.com portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features RDS(on) = 3.5 W • Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal for N-Channel Low Voltage Applica

4.7. bss138n.pdf Size:210K _update-mosfet

BSS138K
BSS138K

BSS138N SIPMOS® Small-Signal-Transistor Product Summary Features V 60 V DS • N-channel R 3.5 Ω DS(on),max • Enhancement mode I 0.23 A D • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant PG-SOT-23 • Qualified according to AEC Q101 Type Package Tape and Reel Marking BSS138N PG-SOT-23 L6327: 3000 SKs BSS138N PG-SOT-23 L6433: 10000 SKs Parameter

4.8. bss138lt1g.pdf Size:551K _update-mosfet

BSS138K
BSS138K

Lead Free RoHS Compliant  MEI BSS138LT1G N–Channel SOT–23 3 Typical applications are dc–dc converters, power management in portable and battery–powered products such as computers, printers, 1 PCMCIA cards, cellular and cordless telephones. 2 • Low Threshold Voltage (V GS(th): 0.5V...1.5V) makes it ideal for low voltage applications SOT– 23 (TO–236AB) • Miniatu

4.9. gsmbss138.pdf Size:432K _update-mosfet

BSS138K
BSS138K

GSMBSS138 50V N-Channel Enhancement Mode MOSFET Product Description Features The GSMBSS138 is the N-Channel enhancement  50V/0.2A , RDS(ON)=3.5Ω@VGS=5V mode field effect transistors are produced using  50V/0.2A , RDS(ON)=10Ω@VGS=2.75V high cell density DMOS technology.  Super high density cell design for extremely low RDS (ON) These products have been designed to min

4.10. bss138.pdf Size:121K _fairchild_semi

BSS138K
BSS138K

October 2005 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect 0.22 A, 50 V. RDS(ON) = 3.5? @ VGS = 10 V transistors are produced using Fairchilds proprietary, RDS(ON) = 6.0? @ VGS = 4.5 V high cell density, DMOS technology. These products have been designed to minimize on-state re

4.11. bss138w.pdf Size:212K _fairchild_semi

BSS138K
BSS138K

December 2010 BSS138W N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description Features These N-Channel enhancement mode field effect RDS(ON) = 3.5? @ VGS = 10V, ID = 0.22A transistor. These products have been designed to RDS(ON) = 6.0? @ VGS = 4.5V, ID = 0.22A minimize on-state resistance while provide rugged, High density cell design for extremely low RDS(O

4.12. bss138 1.pdf Size:89K _diodes

BSS138K
BSS138K

BSS138 N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 Low Gate Threshold Voltage Case Material: Molded Plastic. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Alloy 42 leadframe Low Input/Output L

4.13. bss138w.pdf Size:89K _diodes

BSS138K
BSS138K

BSS138W N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT-323 Low Gate Threshold Voltage Case Material: Molded Plastic, "Green" Molding Compound, Note 6. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Matte Tin Finish annealed over Allo

4.14. bss138dw.pdf Size:109K _diodes

BSS138K
BSS138K

BSS138DW DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low On-Resistance Case: SOT-363 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound (Note 6). UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per

4.15. bss138.pdf Size:91K _infineon

BSS138K
BSS138K

BSS 138 SIPMOS Small-Signal Transistor N channel Enhancement mode Logic Level VGS(th) = 0.8...2.0V Pin 1 Pin 2 Pin 3 G S D Type VDS ID RDS(on) Package Marking BSS 138 50 V 0.22 A 3.5 ? SOT-23 SSs Type Ordering Code Tape and Reel Information BSS 138 Q67000-S566 E6327 BSS 138 Q67000-S216 E6433 Maximum Ratings Parameter Symbol Values Unit Drain source voltage VDS 50 V V Dra

4.16. bss138lt1.pdf Size:127K _onsemi

BSS138K
BSS138K

BSS138LT1 Preferred Device Power MOSFET 200 mA, 50 V N-Channel SOT-23 Typical applications are DC-DC converters, power management in http://onsemi.com portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 200 mA, 50 V Features RDS(on) = 3.5 W Low Threshold Voltage (VGS(th): 0.5 V-1.5 V) Makes it Ideal for N-Channel Low Vo

4.17. bss138.pdf Size:155K _utc

BSS138K
BSS138K

UNISONIC TECHNOLOGIES CO., LTD BSS138 Preliminary Power MOSFET N-CHANNEL LOGIC LEVEL ENHANCEMENT MODE DESCRIPTION This device employs advanced MOSFET technology and features low gate charge while maintaining low on-resistance. Optimized for switching applications, this device improves the overall efficiency of DC/DC converters and allows operation to higher switching frequencies

4.18. bss138.pdf Size:221K _wietron

BSS138K
BSS138K

BSS138 Small Signal MOSFET N-Channel 3 DRAIN SOT-23 Features: 3 1 ? *Low On-Resistance : 3.5 GATE 1 *Low Input Capacitance: 40PF 2 *Low Out put Capacitance : 12PF 2 SOURCE *Low Threshole :1 .5V *Fast Switching Speed : 20ns Application: * DC to DC Converter * Cellular & PCMCIA Card * Cordless Telephone * Power Management in Portable and Battery etc. Maximum Ratings (TA=25 C

4.19. bss138w.pdf Size:811K _wietron

BSS138K
BSS138K

BSS138W 3 DRAIN N-Channel POWER MOSFET P b Lead(Pb)-Free 3 1 2 1 Description: GATE * Typical applications are dc–dc converters, SOT-323(SC-70) power management in portable and battery–powered 2 SOURCE products such as computers, printers, PCMCIA cards, cellular and cordless telephones. Features: * Simple Drive Requirement * Small Package Outline Maximum Ratings (TA=25°

4.20. bss138lt1.pdf Size:391K _willas

BSS138K
BSS138K

FM120-M WILLAS THRU BSS 8LT1 200 mAmps, 50 Volts Power MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize

4.21. bss138wt1.pdf Size:416K _willas

BSS138K
BSS138K

FM120-M WILLAS BSS138WT1 THRU 200 mAmps, 50 Volts Power MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features • Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H • Low profile surface mounted application in order to optimize

4.22. bss138c3.pdf Size:609K _cystek

BSS138K
BSS138K

Spec. No. : C834C3 Issued Date : 2012.06.25 CYStech Electronics Corp. Revised Date : 2014.08.20 Page No. : 1/9 50V N-Channel Enhancement Mode MOSFET BVDSS 50V BSS138C3 ID 250mA RDSON@VGS=10V, ID=220mA 1.1Ω(typ) RDSON@VGS=4.5V, ID=220mA 1.3Ω(typ) RDSON@VGS=2.5V,ID=220mA 1.7Ω(typ) RDSON@VGS=4V,ID=100mA Features 1.3Ω(typ) • Simple drive requirement RDSON@VGS=2.

4.23. bss138-3.pdf Size:1105K _kexin

BSS138K
BSS138K

SMD Type MOSFET N-Channel MOSFET BSS138 (KSS138) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4-0.1 3 ■ Features ● VDS (V) = 50V ● ID = 200 mA (VGS = 10V) 1 2 +0.02 +0.1 0.15 -0.02 ● RDS(ON) < 3.5Ω (VGS = 10V) 0.95 -0.1 +0.1 1.9 -0.2 ● Fast Switching Speed ● Low On-Resistance 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Sym

4.24. bss138.pdf Size:802K _kexin

BSS138K
BSS138K

SMD Type MOSFET N-Channel MOSFET BSS138 (KSS138) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 50V ● ID = 200 mA (VGS = 10V) 1 2 ● RDS(ON) < 3.5Ω (VGS = 10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 ● Fast Switching Speed 1.9-0.1 ● Low On-Resistance 1. Gate 2. Source 3. Drain ■ Absolute Maximum Ratings Ta = 25℃ Parameter Symbol R

4.25. bss138e-3.pdf Size:1197K _kexin

BSS138K
BSS138K

SMD Type MOSFET N-Channel MOSFET BSS138E (KSS138E) SOT-23-3 Unit: mm +0.2 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 50V ● ID = 300 mA (VGS = 10V) 1 2 +0.02 +0.1 ● RDS(ON) < 2.5Ω (VGS = 10V) 0.15 -0.02 0.95 -0.1 +0.1 1.9 -0.2 ● RDS(ON) < 3.5Ω (VGS =2.5V) ● Low On-Resistance ● ESD Rating: 1.5KV HBM 1. Gate 2. Source 3. Drain ■ Absolute M

4.26. bss138e.pdf Size:1172K _kexin

BSS138K
BSS138K

SMD Type MOSFET N-Channel MOSFET BSS138E (KSS138E) SOT-23 Unit: mm +0.1 2.9 -0.1 +0.1 0.4 -0.1 3 ■ Features ● VDS (V) = 50V ● ID = 300 mA (VGS = 10V) 1 2 ● RDS(ON) < 2.5Ω (VGS = 10V) +0.1 +0.05 0.95-0.1 0.1-0.01 +0.1 ● RDS(ON) < 3.5Ω (VGS =2.5V) 1.9-0.1 ● Low On-Resistance ● ESD Rating: 1.5KV HBM 1. Gate 2. Source 3. Drain ■ Absolute Maximum

4.27. bss138.pdf Size:671K _shenzhen-tuofeng-semi

BSS138K
BSS138K

Shenzhen Tuofeng Semiconductor Technology Co., Ltd BSS138 BSS138 N-Channel Logic Level Enhancement Mode Field Effect Transistor Features General Description These N-Channel enhancement mode field effect • 0.22 A, 50 V. RDS(ON) = 3.5Ω @ VGS = 10 V transistors are produced using Fairchild’s proprietary, RDS(ON) = 6.0Ω @ VGS = 4.5 V high cell density, DMOS technology. Th

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