All MOSFET. WSP9926B Datasheet

 

WSP9926B Datasheet and Replacement


   Type Designator: WSP9926B
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.1 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 11.3 nC
   tr ⓘ - Rise Time: 13.2 nS
   Cossⓘ - Output Capacitance: 140 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.026 Ohm
   Package: SOP8
 

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WSP9926B Datasheet (PDF)

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WSP9926B

WSP9926BDual N-Channel MOSFETGeneral Description Product SummeryThe WSP9926B is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 17m 8Agate charge for most of the small power switching and load switch applications. Applications The WSP9926B meet the RoHS and Green Product requirement wit

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WSP9926B

WSP9926ADual N-Channel MOSFETGeneral Description Product SummeryThe WSP9926A is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 20V 20m 7.5Aand gate charge for most of the small power switching and load switch applications. Applications The WSP9926A meet the RoHS and Green Product requirement w

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WSP9926B

WSP9936Dual N-Channel MOSFETGeneral Description Product SummeryThe WSP9936 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON 20V 14m 8Aand gate charge for most of the small power switching and load switch applications. Applications The WSP9936 meet the RoHS and Green Product requirement with fu

Datasheet: WSP6064 , WSP6067 , WSP6946 , WSP8205 , WSP8810 , WSP8810A , WSP9435 , WSP9926A , IRF9540 , WSP9936 , WSR10N65F , WSR140N08 , WSR18P10 , WSR200N08 , WSR25N20 , WSR45P10 , WSR4N65F .

Keywords - WSP9926B MOSFET datasheet

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