All MOSFET. WSR140N08 Datasheet

 

WSR140N08 Datasheet and Replacement


   Type Designator: WSR140N08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 140 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 115 nC
   tr ⓘ - Rise Time: 17 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: TO220FB
 
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WSR140N08 Datasheet (PDF)

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WSR140N08

WSR140N08 N-Ch MOSFETProduct SummeryGeneral Description The WSR140N08 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high 80V 4.8m 140Acell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications Power Management for Inverter Systems.Features TO-220FB-3L Pin Configu

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