All MOSFET. WSR80P06 Datasheet

 

WSR80P06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WSR80P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 86.8 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 25 nC
   trⓘ - Rise Time: 23.6 nS
   Cossⓘ - Output Capacitance: 224 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.018 Ohm
   Package: TO220AB

 WSR80P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WSR80P06 Datasheet (PDF)

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 wsr80p06.pdf

WSR80P06 WSR80P06

WSR80P06 P-Ch MOSFETGeneral Description Product SummeryBVDSS RDSON ID The WSR80P06 uses advanced trench technology to provide excellent RDS(ON), low 18m-60V -50Agate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Applications Battery protection or in other Switching application. Battery protection /Load switch /Uninterru

 9.1. Size:799K  winsok
 wsr80n10.pdf

WSR80P06 WSR80P06

WSR80N10 N-Ch MOSFETGeneral Description Product SummeryThe WSR80N10 is the highest performance ID BVDSS RDSON trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 10m 85Aand gate charge for most of the synchronous buck converter applications . Applications The WSR80N10 meet the RoHS and Green Power Management in TV Converter. Pr

 9.2. Size:3546K  winsok
 wsr80n06.pdf

WSR80P06 WSR80P06

WSR80N06 N-Ch MOSFETGeneral Description Product SummeryThe WSR80N06 uses advanced trench BVDSS RDSON ID technology and design to provide excellent RDS(ON) 60V 9.1m 80Awith low gate charge. It can be used in a wide variety of applications. Application Power switching application Hard switched and high frequency circuits Uninterruptible power supplyFeature

 9.3. Size:718K  winsok
 wsr80n08.pdf

WSR80P06 WSR80P06

WSR80N08N-Ch MOSFETGeneral Description Product SummeryThe WSR80N08 is the highest performance trench RDSON BVDSS ID N-ch MOSFET with extreme high cell density,which provide excellent RDSON and gate charge for most of 80V 8.4m 80Athe synchronous buck converter applications . The WSR80N08 meet the RoHS and Green Product Applications requirement,100% EAS guaranteed with

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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