All MOSFET. FCA20N60F Datasheet

 

FCA20N60F MOSFET. Datasheet pdf. Equivalent

Type Designator: FCA20N60F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 208 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 20 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 75 nC

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO3PN

FCA20N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FCA20N60F Datasheet (PDF)

1.1. fca20n60fs.pdf Size:952K _upd-mosfet

FCA20N60F
FCA20N60F

December 2008 TM SuperFET FCA20N60F 600V N-CHANNEL FRFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.15Ω balance mechanism for outstanding low on-resistance and • Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This a

1.2. fca20n60f.pdf Size:952K _fairchild_semi

FCA20N60F
FCA20N60F

December 2008 TM SuperFET FCA20N60F 600V N-CHANNEL FRFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15? balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 160ns ) lower gate charge performance. This advanced techn

 2.1. fca20n60s fca20n60s f109.pdf Size:750K _upd-mosfet

FCA20N60F
FCA20N60F

August 2007 TM SuperFET FCA20N60S / FCA20N60S_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Farichild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.22Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=55nC) lower gate charge perform

2.2. fca20n60 f109.pdf Size:481K _fairchild_semi

FCA20N60F
FCA20N60F

August 2014 FCA20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- • 650V @ TJ = 150°C tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 150 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 75 nC ) resistance an

 2.3. fca20n60.pdf Size:481K _fairchild_semi

FCA20N60F
FCA20N60F

August 2014 FCA20N60 N-Channel SuperFET® MOSFET 600 V, 20 A, 190 mΩ Features Description SuperFET® MOSFET is Fairchild Semiconductor’s first genera- • 650V @ TJ = 150°C tion of high voltage super-junction (SJ) MOSFET family that is • Typ. RDS(on) = 150 mΩ utilizing charge balance technology for outstanding low on- • Ultra Low Gate Charge (Typ. Qg = 75 nC ) resistance an

2.4. fch20n60 fca20n60 fca20n60 f109.pdf Size:971K _fairchild_semi

FCA20N60F
FCA20N60F

December 2008 TM SuperFET FCH20N60 / FCA20N60 / FCA20N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.15? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=55nC) lower gate charge performanc

Datasheet: 2N7002T , 2N7002V , 2N7002VA , 2N7002W , BSS138K , BSS138W , FCA16N60N , IRF220 , 2SK4106 , IRF221 , FCA22N60N , IRF222 , FCA35N60 , IRF223 , FCA36N60NF , IRF3705 , FCA47N60 .

 
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