All MOSFET. WST2305 Datasheet

 

WST2305 MOSFET. Datasheet pdf. Equivalent


   Type Designator: WST2305
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 4.4 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 10.2 nC
   trⓘ - Rise Time: 40.8 nS
   Cossⓘ - Output Capacitance: 114 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.06 Ohm
   Package: SOT23N

 WST2305 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

WST2305 Datasheet (PDF)

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wst2305.pdf

WST2305
WST2305

WST2305 P-Ch MOSFETGeneral Description Product SummeryThe WST2305 is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON and -4.4A-20V 50mgate charge for most of the synchronous buck converter applications . Applications The WST2305 meet the RoHS and Green Product requirement,with full function H

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wst2305a.pdf

WST2305
WST2305

WST2305AP-Ch MOSFETGeneral Description Product SummeryThe WST2305A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density,which provide excellent RDSON -4A-20V 60mand gate charge for most of the synchronous buck converter applications . Applications The WST2305A meet the RoHS and Green Product requirement,with full function Hi

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wst2301.pdf

WST2305
WST2305

WST2301 P-Ch MOSFETGeneral Description Product SummeryThe WST2301 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate -20V 100m -2.9Acharge for most of the small power switching and load switch applications. Applications The WST2301 meet the RoHS and Green Product requirement with full fu

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wst2304.pdf

WST2305
WST2305

WST2304N-Ch MOSFETGeneral Description Product SummeryThe WST2304 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , 20V 20m 6.3Awhich provide excellent RDSON and gate charge for most of the small power switching and load switch applications.Applications The WST2304 meet the RoHS and Green Power management in portable and

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wst2300.pdf

WST2305
WST2305

WST2300 N-Ch MOSFETGeneral Description Product SummeryThe WST2300 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 20V 50m 4.4Acharge for most of the small power switching and load switch applications. Applications The WST2300 meet the RoHS and Green Product requirement with full funct

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wst2303a.pdf

WST2305
WST2305

WST2303AP-Ch MOSFETGeneral Description Product SummeryThe WST2303A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 144m -2.5Agate charge for most of the small power switching and load switch applications. Applications The WST2303A meet the RoHS and Green Product requirement with full

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wst2302.pdf

WST2305
WST2305

WST2302N-Ch MOSFETGeneral Description Product SummeryThe WST2302 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 20V 70m 3.0Afor most of the small power switching and load switch applications.Applications The WST2302 meet the RoHS and Green Product requirement with full functio

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wst2303.pdf

WST2305
WST2305

WST2303 P-Ch MOSFETGeneral Description Product SummeryThe WST2303 is the highest performance trench BVDSS RDSON ID P-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 65m -3.8Afor most of the small power switching and load switch applications. Applications The WST2303 meet the RoHS and Green High Frequency Point-of-Load

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wst2307.pdf

WST2305
WST2305

WST2307P-Ch MOSFETProduct SummeryGeneral Description The WST2307 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density ,which provide excellent RDSON and gate charge-30V 51m -5.8Afor most of the small power switching and loadswitch applications.Applications The WST230 meet the RoHS and Green Product requirement with full functio

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wst2301a.pdf

WST2305
WST2305

WST2301A P-Ch MOSFETGeneral Description Product SummeryThe WST2301A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 140m -2.5Agate charge for most of the small power switching and load switch applications. Applications The WST2301A meet the RoHS and Green Product requirement with full

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wst2300a.pdf

WST2305
WST2305

WST2300A N-Ch MOSFETGeneral Description Product SummeryThe WST2300A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 60m 3.0Agate charge for most of the small power switching and load switch applications. Applications The WST2300A meet the RoHS and Green Product requirement with full

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wst2304a.pdf

WST2305
WST2305

WST2304AN-Ch MOSFETGeneral Description Product SummeryThe WST2304A is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent 30V 35m 5.2ARDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2304A meet the RoHS and Green Product requirement with full

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: DMN3030LFG

 

 
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