WST2N7002 Datasheet. Specs and Replacement

Type Designator: WST2N7002  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 0.2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 0.18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 1.8 nS

Cossⓘ - Output Capacitance: 12 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 6.6 Ohm

Package: SOT23N

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WST2N7002 substitution

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WST2N7002 datasheet

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WST2N7002

WST2N7002 N-Ch MOSFET General Description Product Summery The WST2N7002 is the highest performance trench BVDSS RDSON ID N-CH MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most 60V 2 180mA of the small power switching and load switch applications. Applications The WST2N7002 meet the RoHS and Green Product requirement with full ... See More ⇒

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WST2N7002

WST2N7002A N-Ch MOSFET General Description Product Summery The WST2N7002A is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 60V 0.14 700mA excellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2N7002A meet the RoHS and Green Product requirement wi... See More ⇒

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WST2N7002

WST2N7002K N-Ch MOSFET Product Summery General Description The WST2N7002K is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 1 300mA gate charge for most of the small power switching and load switch applications. Applications The WST2N7002K meet the RoHS and Green Product requirement with... See More ⇒

Detailed specifications: WST2315, WST2316A, WST2319, WST2333, WST2333A, WST2335, WST2337A, WST2339, P60NF06, WST2N7002A, WST2N7002K, WST3032, WST3034, WST3052, WST3078, WST3325, WST3392

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