WST2N7002A
MOSFET. Datasheet pdf. Equivalent
Type Designator: WST2N7002A
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3
V
|Id|ⓘ - Maximum Drain Current: 0.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
trⓘ - Rise Time: 8.2
nS
Cossⓘ -
Output Capacitance: 70
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.45
Ohm
Package: SOT23N
WST2N7002A
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WST2N7002A
Datasheet (PDF)
..1. Size:1407K winsok
wst2n7002a.pdf
WST2N7002A N-Ch MOSFETGeneral Description Product SummeryThe WST2N7002A is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 60V 0.14 700mAexcellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2N7002A meet the RoHS and Green Product requirement wi
5.1. Size:1382K winsok
wst2n7002.pdf
WST2N7002 N-Ch MOSFETGeneral Description Product SummeryThe WST2N7002 is the highest performance trench BVDSS RDSON ID N-CH MOSFET with extreme high cell density , which provide excellent RDSON and gate charge for most 60V 2 180mAof the small power switching and load switch applications. Applications The WST2N7002 meet the RoHS and Green Product requirement with full
5.2. Size:876K winsok
wst2n7002k.pdf
WST2N7002K N-Ch MOSFETProduct SummeryGeneral Description The WST2N7002K is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 60V 1 300mAgate charge for most of the small power switching and load switch applications. Applications The WST2N7002K meet the RoHS and Green Product requirement with
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