WPM3020 MOSFET. Datasheet pdf. Equivalent
Type Designator: WPM3020
Marking Code: PA*
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
|Id|ⓘ - Maximum Drain Current: 3.2 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 27 nC
trⓘ - Rise Time: 4.4 nS
Cossⓘ - Output Capacitance: 93 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.057 Ohm
Package: SOT23
WPM3020 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
WPM3020 Datasheet (PDF)
wpm3020.pdf
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WPM3020 WPM3020 Single P-Channel, -30V, -3.8A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DD43 @ VGS=-10V -30 SS48 @ VGS=-4.5V GGSOT-23 Descriptions D The WPM3020 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is s
wpm3021.pdf
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WPM3021 WPM3021 Single P-Channel, -30V, -13A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical R (m) DS DS(on)11@ V =-10V GS-30 15 @ V =-5V GS (4) (3) (2) Descriptions (1) The WPM3021 is P-Channel enhancement MOS SOP-8L Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) D D D D with low gate charge. Th
wpm3022.pdf
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WPM3022 WPM3022 Single P-Channel, -30V, -3.1A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DD56 @ VGS=-10V -30 SS77 @ VGS=-4.5V GGSOT-23 Descriptions D The WPM3022 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is s
wpm3005.pdf
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WPM3005WPM3005Single P-Channel, -30V, -4.1A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.057@ VGS= 10.0V0.057@ VGS= 10.0V-300.083@ VGS= 4.5V0.083@ VGS= 4.5VSOT-23-3L DescriptionsD3The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This devi
wpm3012.pdf
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WPM3012WPM3012Http://www.sh-willsemi.com Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) Rds(on) ( )0.058@ VGS= 10V-300.080@ VGS= 4.5VSOT-23 DescriptionsD3The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) 1 2with low gate charge. This device is suitable for use GSin D
wpm3004.pdf
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WPM3004 WPM3004 Single P-Channel, -30V, -5.0A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.053@ VGS= 10.0V 0.053@ VGS= 10.0V -30 0.079@ VGS= 4.5V 0.079@ VGS= 4.5V SOP-8L Descriptions D D DDThe WPM3004 is P-Channel enhancement MOS 8 7 6 5Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gat
wpm3005.pdf
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Product specificationWPM3005Single P-Channel, -30V, -4.1A, Power MOSFET VDS (V) Rds(on) ( )0.057@ VGS= 10.0V0.057@ VGS= 10.0V-300.083@ VGS= 4.5V0.083@ VGS= 4.5VSOT-23-3L DescriptionsD3The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitab
wpm3012.pdf
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Product specificationWPM3012Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) Rds(on) ( )0.058@ VGS= 10V-300.080@ VGS= 4.5VSOT-23 DescriptionsD3The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use 1 2in DC-DC conversion, pow
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
![WPM3020](https://alltransistors.com/images/us.png)
![WPM3020](https://alltransistors.com/images/es.png)
![WPM3020](https://alltransistors.com/images/ru.png)
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