WPM3022 Datasheet and Replacement

WPM3022 WPM3022 Single P-Channel, -30V, -3.1A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DD56 @ VGS=-10V -30 SS77 @ VGS=-4.5V GGSOT-23 Descriptions D The WPM3022 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is s

WPM3021 WPM3021 Single P-Channel, -30V, -13A, Power MOSFET Http://www.sh-willsemi.com V (V) Typical R (m) DS DS(on)11@ V =-10V GS-30 15 @ V =-5V GS (4) (3) (2) Descriptions (1) The WPM3021 is P-Channel enhancement MOS SOP-8L Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) D D D D with low gate charge. Th

WPM3020 WPM3020 Single P-Channel, -30V, -3.8A, Power MOSFET Http://www.sh-willsemi.com VDS (V) Typical RDS(on) (m) DD43 @ VGS=-10V -30 SS48 @ VGS=-4.5V GGSOT-23 Descriptions D The WPM3020 is P-Channel enhancement MOS 3 Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is s

WPM3005WPM3005Single P-Channel, -30V, -4.1A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.057@ VGS= 10.0V0.057@ VGS= 10.0V-300.083@ VGS= 4.5V0.083@ VGS= 4.5VSOT-23-3L DescriptionsD3The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This devi

WPM3012WPM3012Http://www.sh-willsemi.com Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) Rds(on) ( )0.058@ VGS= 10V-300.080@ VGS= 4.5VSOT-23 DescriptionsD3The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) 1 2with low gate charge. This device is suitable for use GSin D

WPM3004 WPM3004 Single P-Channel, -30V, -5.0A, Power MOSFET Http//:www.willsemi.com VDS (V) Rds(on) ( )0.053@ VGS= 10.0V 0.053@ VGS= 10.0V -30 0.079@ VGS= 4.5V 0.079@ VGS= 4.5V SOP-8L Descriptions D D DDThe WPM3004 is P-Channel enhancement MOS 8 7 6 5Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gat

Product specificationWPM3005Single P-Channel, -30V, -4.1A, Power MOSFET VDS (V) Rds(on) ( )0.057@ VGS= 10.0V0.057@ VGS= 10.0V-300.083@ VGS= 4.5V0.083@ VGS= 4.5VSOT-23-3L DescriptionsD3The WPM3005 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitab

Product specificationWPM3012Single P-Channel, -30V, -3.1A, Power MOSFET VDS (V) Rds(on) ( )0.058@ VGS= 10V-300.080@ VGS= 4.5VSOT-23 DescriptionsD3The WPM3012 is P-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON)with low gate charge. This device is suitable for use 1 2in DC-DC conversion, pow