SE100180GA MOSFET Datasheet: N-Ch, 100V, 180A. Full specification with pinout and replacement list

SE100180GA Specs and Replacement

Type Designator: SE100180GA

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 180 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 56 nS

Cossⓘ - Output Capacitance: 580 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0028 Ohm

Package: TO220

SE100180GA substitution

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SE100180GA datasheet

..1. Size:290K cn sino-ic
se100180ga.pdf pdf_icon

SE100180GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =100V DS operation voltage. This device is suitable for R =2.5m @V =10V DS(ON) GS using as a load switch or in PWM applications. Synchronous Rectification in SMPS Hard Switchin... See More ⇒

8.1. Size:470K cn sino-ic
se100150g.pdf pdf_icon

SE100150G N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =100V DS operation voltage. This device is suitable for R =3.5m @V =10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline ... See More ⇒

8.2. Size:399K cn sino-ic
se10015.pdf pdf_icon

SE10015 N-Channel MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V =100V DS low operation voltage. This device is R =67m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline Surface Mount De... See More ⇒

8.3. Size:289K cn sino-ic
se100130ga.pdf pdf_icon

SE100130GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =100V DS charge. R =4m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See Di... See More ⇒