SE100P60 PDF and Equivalents Search

 ..1. Size:358K  cn sino-ic
 se100p60.pdf

SE100P60 P-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V = -100V DS low operation voltage. This device is R =18m @V =-10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline ... See More ⇒

 9.1. Size:624K  cn sino-ic
 se10080a.pdf

SE10080A N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =100V DS Voltage and Current Improved Shoot-Through R =9.9m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒

 9.2. Size:508K  cn sino-ic
 se10060a.pdf

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 9.3. Size:470K  cn sino-ic
 se100150g.pdf

SE100150G N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =100V DS operation voltage. This device is suitable for R =3.5m @V =10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline ... See More ⇒

 9.4. Size:399K  cn sino-ic
 se10015.pdf

SE10015 N-Channel MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V =100V DS low operation voltage. This device is R =67m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline Surface Mount De... See More ⇒

 9.5. Size:289K  cn sino-ic
 se100130ga.pdf

SE100130GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent R with low gate DS(ON) V =100V DS charge. R =4m @V =10V DS(ON) GS High density cell design for ultra low R DS(ON) Excellent package for good heat dissipation Pin configurations See Di... See More ⇒

 9.6. Size:576K  cn sino-ic
 se1003.pdf

SE1003 N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 100V DS Voltage and Current Improved Shoot-Through R = 230m @ V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒

 9.7. Size:418K  cn sino-ic
 se100130a.pdf

SE100130A N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V = 100V DS low operation voltage. This device is R =3.0m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outline ... See More ⇒

 9.8. Size:290K  cn sino-ic
 se100180ga.pdf

SE100180GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and low V =100V DS operation voltage. This device is suitable for R =2.5m @V =10V DS(ON) GS using as a load switch or in PWM applications. Synchronous Rectification in SMPS Hard Switchin... See More ⇒

 9.9. Size:338K  cn sino-ic
 se100250gts.pdf

SE100250GTS N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET Advanced trench technology to provide excellent RDS(ON), low gate charge and V = 100V DS low operation voltage. This device is R =2.5m @V =10V DS(ON) GS suitable for using as a load switch or in PWM applications. Simple Drive Requirement Small Package Outlin... See More ⇒

 9.10. Size:420K  cn sino-ic
 se10030a.pdf

SE10030A N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =100V DS Voltage and Current Improved Shoot-Through R =25m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configurations ... See More ⇒