SE12060GA Datasheet and Replacement
Type Designator: SE12060GA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id|ⓘ - Maximum Drain Current: 60 A
Tjⓘ - Maximum Junction Temperature: 175 °C
trⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 235 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO220 TO263
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SE12060GA Datasheet (PDF)
se12060ga.pdf

SE12060GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = 120VDSVoltage and Current Improved Shoot-Through R = 12m @ V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configuration
crse120n10l2.pdf

CRSE120N10L2() SkyMOS2 N-MOSFET 100, 11.0m, 11AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS2 technology 100 Extremely low on-resistance RDS(on) RDS(on)@10V typ11.0m Excellent QgxRDS(on) product(FOM) RDS(on)@4.5V typ14.0mID Qualified according to JEDEC criteria 11AApplications Synchronous Rectification f
se120120g.pdf

SE120120GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETThis device used advanced semiconductortechnology and design to provide excellent RDS(ON) V =120VDSwith low gate charge and low operation voltage. It can R =4.4m @V =10VDS(ON) GSbe used in wide variety of application Excellent package for superior thermal resis
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , AON7408 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
History: NVD4806N | GSM6424 | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003
Keywords - SE12060GA MOSFET datasheet
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History: NVD4806N | GSM6424 | SFB053N100C3 | FQU13N10 | SWMI4N65D | NTMFS4837NHT1G | BMS3003



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