SE12060GA Datasheet and Replacement
Type Designator: SE12060GA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 235 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
Package: TO220 TO263
SE12060GA substitution
SE12060GA Datasheet (PDF)
se12060ga.pdf

SE12060GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = 120VDSVoltage and Current Improved Shoot-Through R = 12m @ V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configuration
crse120n10l2.pdf

CRSE120N10L2() SkyMOS2 N-MOSFET 100, 11.0m, 11AFeatures Product SummaryVDS Uses CRM(CQ) advanced SkyMOS2 technology 100 Extremely low on-resistance RDS(on) RDS(on)@10V typ11.0m Excellent QgxRDS(on) product(FOM) RDS(on)@4.5V typ14.0mID Qualified according to JEDEC criteria 11AApplications Synchronous Rectification f
se120120g.pdf

SE120120GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETThis device used advanced semiconductortechnology and design to provide excellent RDS(ON) V =120VDSwith low gate charge and low operation voltage. It can R =4.4m @V =10VDS(ON) GSbe used in wide variety of application Excellent package for superior thermal resis
Datasheet: SE100180GA , SE100250GTS , SE1003 , SE10030A , SE10060A , SE10080A , SE100P60 , SE120120G , 20N50 , SE1216 , SE12N50FRA , SE12N65 , SE138U , SE150110G , SE150180G , SE150180GTS , SE15N50FRA .
History: STWA48N60M2 | IRF6795M
Keywords - SE12060GA MOSFET datasheet
SE12060GA cross reference
SE12060GA equivalent finder
SE12060GA lookup
SE12060GA substitution
SE12060GA replacement
History: STWA48N60M2 | IRF6795M



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