SE12060GA Specs and Replacement
Type Designator: SE12060GA
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 214 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 120 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 60 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 21 nS
Cossⓘ - Output Capacitance: 235 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.014 Ohm
SE12060GA substitution
- MOSFET ⓘ Cross-Reference Search
SE12060GA datasheet
se12060ga.pdf
SE12060GA N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 120V DS Voltage and Current Improved Shoot-Through R = 12m @ V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configuration... See More ⇒
crse120n10l2.pdf
CRSE120N10L2 ( ) SkyMOS2 N-MOSFET 100, 11.0m , 11A Features Product Summary VDS Uses CRM(CQ) advanced SkyMOS2 technology 100 Extremely low on-resistance RDS(on) RDS(on)@10V typ 11.0m Excellent QgxRDS(on) product(FOM) RDS(on)@4.5V typ 14.0m ID Qualified according to JEDEC criteria 11A Applications Synchronous Rectification f... See More ⇒
se120120g.pdf
SE120120G N-Channel Enhancement-Mode MOSFET Revision A General Description Features For a single MOSFET This device used advanced semiconductor technology and design to provide excellent RDS(ON) V =120V DS with low gate charge and low operation voltage. It can R =4.4m @V =10V DS(ON) GS be used in wide variety of application Excellent package for superior thermal resis... See More ⇒
Detailed specifications: SE100180GA, SE100250GTS, SE1003, SE10030A, SE10060A, SE10080A, SE100P60, SE120120G, STP80NF70, SE1216, SE12N50FRA, SE12N65, SE138U, SE150110G, SE150180G, SE150180GTS, SE15N50FRA
Keywords - SE12060GA MOSFET specs
SE12060GA cross reference
SE12060GA equivalent finder
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History: SE100P60
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