SE15N50FRA MOSFET. Datasheet pdf. Equivalent
Type Designator: SE15N50FRA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id|ⓘ - Maximum Drain Current: 15 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 31 nS
Cossⓘ - Output Capacitance: 58 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: TO220
SE15N50FRA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE15N50FRA Datasheet (PDF)
..1. Size:1693K cn sino-ic
se15n50fra.pdf
se15n50fra.pdf
SE15N50FRA N-Channel Enhancement-Mode MOSFET with FR Revision: A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche VDS = 500V Voltage and Current Improved Shoot-Through RDS(ON) = 0.43 @ VGS=10V FOM Simple Drive Requirement Small Package Outline Surface Mount Device
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