All MOSFET. SE2101 Datasheet

 

SE2101 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SE2101
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1 V
   |Id|ⓘ - Maximum Drain Current: 0.9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 80 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: SOT23

 SE2101 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE2101 Datasheet (PDF)

 ..1. Size:170K  cn sino-ic
 se2101.pdf

SE2101 SE2101

Jul 2015 SE2101 P-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type is P-Channel enhancement mode For a single MOSFET power MOSFET which is produced with high VDS = -20V cell density and DMOS trench technology. This ID= -0.9A device particularly suits low voltage RDS(ON) = 280m @ VGS=-4.5V applications, especially for batter

 0.1. Size:219K  cn sino-ic
 se2101e.pdf

SE2101 SE2101

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2101E P-Channel Enhancement-Mode MOSFET Revision:A General Description Features SE2101E is P-Channel enhancement mode power MOSFET which is produced with high VDS -20V, VGS 8V, ID -0.8A RDSon@-4.5V,

 9.1. Size:42K  fairchild semi
 kse210.pdf

SE2101 SE2101

KSE210Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) Complement to KSE200TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 2

 9.2. Size:53K  samsung
 kse210.pdf

SE2101 SE2101

KSE210 PNP EPITAXIAL SILICON TRANSISTORCOLLECTOR-EMITTER SUSTAINING VOLTAGELOW COLLECTOR-EMITTER SATURATIONTO-126SATURATION VOLTAGEHIGH CURRENT GAIN-BANDWIDTHPRODUCT-MIN fT=65 I = -100CComplement to KSE200ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter- Base Voltage VEBO -8 V Co

 9.3. Size:381K  cn sino-ic
 se2102m.pdf

SE2101 SE2101

SHANGHAI July 2009 MICROELECTRONICS CO., LTD. SE2102M Small Signal MOSFET 20 V, 600 mA, Single N-Channel MOSFET General Description Features The MOSFETs from SINO-IC provide the VDS (V) = 20V best combination of fast switching, low ID = 600mA on-resistance and cost-effectiveness. RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: WMJ25N50C4

 

 
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