SE2300 Specs and Replacement
Type Designator: SE2300
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 5.9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 55 nS
Cossⓘ -
Output Capacitance: 250 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.05 Ohm
Package: SOT23
- MOSFET ⓘ Cross-Reference Search
SE2300 datasheet
9.1. Size:429K willas
se2302.pdf 
FM120-M WILLAS SE2302THRU SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimiz... See More ⇒
9.2. Size:457K willas
se2305.pdf
FM120-M WILLAS THRU SE2305 FM1200-M 1.0A SURFACE MOUNT SCHOTTKY SOT-23 Plastic-Encapsulate MOSFETS BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize b... See More ⇒
9.3. Size:460K willas
se2304.pdf
FM120-M WILLAS THRU SE2304 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to N-Channel ... See More ⇒
9.4. Size:443K willas
se2303.pdf
FM120-M WILLAS THRU SE2303 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produ Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize ... See More ⇒
9.5. Size:416K willas
se2306.pdf
FM120-M WILLAS THRU SE2306 SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Produc Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize... See More ⇒
9.6. Size:474K willas
se2301.pdf
FM120-M WILLAS SE2301THRU SOT-23 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to optimize... See More ⇒
9.8. Size:304K cn sino-ic
se2302.pdf
SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2302 2.4A,20V N-Channel MOSFET Revision A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 20V the best combination of fast switching, low ID = 2.4A on-resistance and cost-effectiveness. RDS(ON) ... See More ⇒
9.9. Size:371K cn sino-ic
se2305.pdf
SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE2305 20V P-Channel Enhancement-Mode MOSFET Revision A General Description Features SE2305 is produced with high cell density VDS= -20V DMOS trench technology, which is especially RDS(on)= 52m @VGS= -1.8V ID = -2A used to minimize on-state resistance. This RDS(on)= 40m @VGS= -2.5V ID = -4.1A device part... See More ⇒
9.10. Size:371K cn sino-ic
se2302u.pdf
SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2302U 2.4A,20V N-Channel MOSFET Revision A General Description Features The MOSFETs from SINO-IC provide VDS (V) = 20V the best combination of fast switching, low ID = 2.4A on-resistance and cost-effectiveness. RDS(ON) ... See More ⇒
9.11. Size:255K cn sino-ic
se2306.pdf
SHANGHAI June 2007 MICROELECTRONICS CO., LTD. SE2306 N-Channel Enhancement Mode Field Effect Transistor Revision B Features VDS = 20V,ID = 6A RDS(ON) ... See More ⇒
9.12. Size:378K cn sino-ic
se2305a.pdf
SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE2305A 20V P-Channel Enhancement-Mode MOSFET Revision A General Description Features SE2305A is produced with high cell density VDS= -20V DMOS trench technology, which is especially RDS(on)= 68m @VGS= -1.8V ID = -2A used to minimize on-state resistance. This RDS(on)= 52m @VGS= -2.5V ID = -4.1A device pa... See More ⇒
9.13. Size:497K cn sino-ic
se2301.pdf
SHANGHAI July 2005 MICROELECTRONICS CO., LTD. SE2301 20V P-Channel Enhancement-Mode MOSFET Revision B General Description Features The MOSFETs from SINO-IC provide For a single mosfet the best combination of fast switching, low VDS = -20 V on-resistance and cost-effectiveness. RDS(ON) = 100m @ VGS=-4.50V @Ids=-2.8A RDS(ON) = 150m @ VGS=-2.50V @Ids=-2.0A Gener... See More ⇒
Detailed specifications: SE20040, SE20075, SE2060, SE20N110, SE20P03, SE2101, SE2101E, SE2102M, 8N60, SE2302U, SE2305A, SE2333, SE2N60B, SE2N7002, SE2N7002K, SE30100B, SE30150
Keywords - SE2300 MOSFET specs
SE2300 cross reference
SE2300 equivalent finder
SE2300 pdf lookup
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SE2300 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
