SE30150B MOSFET. Datasheet pdf. Equivalent
Type Designator: SE30150B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 90 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 150 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 80 nC
Rise Time (tr): 36 nS
Drain-Source Capacitance (Cd): 898 pF
Maximum Drain-Source On-State Resistance (Rds): 0.0019 Ohm
Package: TO252
SE30150B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE30150B Datasheet (PDF)
se30150b.pdf
Dec 2014SE30150BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =30VDSVoltage and Current Improved Shoot-Through R =1.6m @V =10 @I =30ADS(ON) GS DSFOM R =2.1m @V =4.5 @I =25ADS(ON) GS DS Simple Drive Requirement Sma
se30150.pdf
SE30150N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and V =30VDSlow operation voltage. This device is R =2.3m @V =10VDS(ON) GSsuitable for using as a load switch or inPWM applications. Simple Drive Requirement Small Package Outline
se30150a.pdf
Dec 2014SE30150AN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =30VDSVoltage and Current Improved Shoot-Through R =2.1m @V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin config
se30100b.pdf
Jan 2015SE30100BN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent R with low gateDS(ON) V =30VDScharge. R =3m @V =10VDS(ON) GS High density cell design for ultra low RDS(ON) Excellent package for good heat dissipationPin configurations
se3018.pdf
Apr 2015 SE3018 N-Channel Enhancement-Mode MOSFET Revision: A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = 50V DSVoltage and Current Improved Shoot-Through R = 2.3 @ V =4.5 DS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount Device
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , AON7410 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
