SE472 Datasheet and Replacement
Type Designator: SE472
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 50 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 280 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm
Package: TO252
SE472 substitution
SE472 Datasheet (PDF)
se3050 se472.pdf

Aug 2015SE3050/SE472N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology For a single MOSFETand design to provide excellent RDS(ON) with V =30VDSlow gate charge. It can be used in a wide R
Datasheet: SE2N7002K , SE30100B , SE30150 , SE30150A , SE30150B , SE3018 , SE30200 , SE3050 , HY1906P , SE3060D , SE3080A , SE3080K , SE3080G , SE3082G , SE3090K , SE30P09D , SE30P12 .
History: SED14N65G | TMAN11N90Z
Keywords - SE472 MOSFET datasheet
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History: SED14N65G | TMAN11N90Z



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