SE30P12 MOSFET Datasheet: P-Ch, 30V, 11A. Full specification with pinout and replacement list

SE30P12 Specs and Replacement

Type Designator: SE30P12

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.5 nS

Cossⓘ - Output Capacitance: 945 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: SOP8

SE30P12 substitution

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SE30P12 datasheet

..1. Size:359K cn sino-ic
se30p12.pdf pdf_icon

Nov 2014 SE30P12 P-Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V = -30V DS operation voltage. This device is suitable for R =11.5m @V =-10V DS(ON) GS using as a load switch or in PWM applications. R =18m @V =-4.5V DS(ON) GS Simple... See More ⇒

0.1. Size:361K cn sino-ic
se30p12d.pdf pdf_icon

SE30P12D P-Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V = -30V DS operation voltage. This device is suitable for R =11.5m @V =-10V DS(ON) GS using as a load switch or in PWM applications. R =18m @V =-4.5V DS(ON) GS Simple Drive Re... See More ⇒

9.1. Size:442K cn sino-ic
se30p50.pdf pdf_icon

Jun 2015 SE30P50 P-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = -30V DS Voltage and Current Improved Shoot-Through R =4.4m @V =-10 @I =-20A DS(ON) GS D FOM Simple Drive Requirement Small Package Outline Surface Mount Device... See More ⇒

9.2. Size:440K cn sino-ic
se30p09d.pdf pdf_icon

Nov 2014 SE30P09D P-Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V = -30V DS operation voltage. This device is suitable for R = 15m @ V =-10V DS(ON) GS using as a load switch or in PWM applications. R = 21m @ V =-4.5V DS(ON) GS Simpl... See More ⇒