SE4607 PDF and Equivalents Search

 ..1. Size:1509K  cn sino-ic
 se4607.pdf

SE4607 Complementary Enhancement Mode Field Effect Transistor Revision A Features PIN CONFIGURATION N-Channel V =20V DS R =20m @V =4.5V, DS(ON) GS P-Channel V = -20V DS R =100m @V =-4.5V DS(ON) GS Applications Power Management in Desktop or DC/DC LCD display Converters Constructions Silicon epitaxial planer Absolute Maximum Ratings (TA=25 ) Parameter... See More ⇒

 9.1. Size:493K  cn sino-ic
 se4606l.pdf

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE4606L Complementary Enhancement Mode Field Effect Transistor Revision A External Dimensions (Unit mm) Features n-channel, VDS (V) = 20V ,ID =7A RDS(ON) =20.0m (VGS=4.5V) p-channel, VDS (V) = -18V ,ID =- 5A RDS(ON) =30m (VGS=-4.5V) Applications Power Management in Desktop or DC/DC Converters Construction Sili... See More ⇒

 9.2. Size:428K  cn sino-ic
 se4606s.pdf

SE4606S N+P Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For N-Channel MOSFET excellent RDS(ON), low gate charge and low VDS = 30V operation voltage. This device is suitable for using RDS(ON) =24m @ VGS=10V as a load switch or in PWM applications. RDS(ON) =39m @ VGS=4.5V Low RDS(on) ... See More ⇒

 9.3. Size:385K  cn sino-ic
 se4606.pdf

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE4606 Complementary Enhancement Mode Field Effect Transistor Revision A External Dimensions (Unit mm) Features n-channel, VDS (V) = 30V ,ID = 8.5A RDS(ON) ... See More ⇒