All MOSFET. SE4607 Datasheet

 

SE4607 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SE4607
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pdⓘ - Maximum Power Dissipation: 1.2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5.2 nC
   trⓘ - Rise Time: 55 nS
   Cossⓘ - Output Capacitance: 70 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SO8

 SE4607 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE4607 Datasheet (PDF)

 ..1. Size:1509K  cn sino-ic
 se4607.pdf

SE4607 SE4607

SE4607Complementary Enhancement Mode Field Effect TransistorRevision: AFeatures PIN CONFIGURATION N-ChannelV =20VDSR =20m @V =4.5V,DS(ON) GS P-ChannelV = -20VDSR =100m @V =-4.5VDS(ON) GSApplications Power Management in Desktop or DC/DCLCD display ConvertersConstructions Silicon epitaxial planerAbsolute Maximum Ratings (TA=25)Parameter

 9.1. Size:493K  cn sino-ic
 se4606l.pdf

SE4607 SE4607

SHANGHAI June 2006MICROELECTRONICS CO., LTD.SE4606LComplementary Enhancement Mode Field Effect TransistorRevision:AExternal Dimensions: (Unit:mm)Features n-channel,VDS (V) = 20V ,ID =7ARDS(ON) =20.0m (VGS=4.5V) p-channel,VDS (V) = -18V ,ID =- 5ARDS(ON) =30m (VGS=-4.5V)Applications Power Management in Desktop or DC/DCConvertersConstruction Sili

 9.2. Size:428K  cn sino-ic
 se4606s.pdf

SE4607 SE4607

SE4606S N+P Channel Enhancement-Mode MOSFET Revision: A General Description Features Advanced trench technology to provide For N-Channel MOSFET excellent RDS(ON), low gate charge and low VDS = 30V operation voltage. This device is suitable for using RDS(ON) =24m @ VGS=10V as a load switch or in PWM applications. RDS(ON) =39m @ VGS=4.5V Low RDS(on)

 9.3. Size:385K  cn sino-ic
 se4606.pdf

SE4607 SE4607

SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE4606 Complementary Enhancement Mode Field Effect Transistor Revision:A External Dimensions: (Unit:mm) Features n-channel, VDS (V) = 30V ,ID = 8.5A RDS(ON)

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 20N50 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: DMN2004DMK | DMN2009LSS

 

 
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