SE4607 Datasheet and Replacement
Type Designator: SE4607
Type of Transistor: MOSFET
Type of Control Channel: NP -Channel
Pd ⓘ - Maximum Power Dissipation: 1.2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 55 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SO8
SE4607 substitution
SE4607 Datasheet (PDF)
se4607.pdf
SE4607Complementary Enhancement Mode Field Effect TransistorRevision: AFeatures PIN CONFIGURATION N-ChannelV =20VDSR =20m @V =4.5V,DS(ON) GS P-ChannelV = -20VDSR =100m @V =-4.5VDS(ON) GSApplications Power Management in Desktop or DC/DCLCD display ConvertersConstructions Silicon epitaxial planerAbsolute Maximum Ratings (TA=25)Parameter
se4606l.pdf
SHANGHAI June 2006MICROELECTRONICS CO., LTD.SE4606LComplementary Enhancement Mode Field Effect TransistorRevision:AExternal Dimensions: (Unit:mm)Features n-channel,VDS (V) = 20V ,ID =7ARDS(ON) =20.0m (VGS=4.5V) p-channel,VDS (V) = -18V ,ID =- 5ARDS(ON) =30m (VGS=-4.5V)Applications Power Management in Desktop or DC/DCConvertersConstruction Sili
se4606s.pdf
SE4606S N+P Channel Enhancement-Mode MOSFET Revision: A General Description Features Advanced trench technology to provide For N-Channel MOSFET excellent RDS(ON), low gate charge and low VDS = 30V operation voltage. This device is suitable for using RDS(ON) =24m @ VGS=10V as a load switch or in PWM applications. RDS(ON) =39m @ VGS=4.5V Low RDS(on)
se4606.pdf
SHANGHAI June 2006 MICROELECTRONICS CO., LTD. SE4606 Complementary Enhancement Mode Field Effect Transistor Revision:A External Dimensions: (Unit:mm) Features n-channel, VDS (V) = 30V ,ID = 8.5A RDS(ON)
Datasheet: SE6080S , SE8090S , SE4060GB , SE40P20B , SE4435 , SE4606 , SE4606L , SE4606S , IRF3710 , SE4610 , SE4625 , SE47NS65TS , SE4942B , SE4946 , SE4953 , SE4N65 , SE540A .
Keywords - SE4607 MOSFET datasheet
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