SE80100GA
MOSFET. Datasheet pdf. Equivalent
Type Designator: SE80100GA
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 125
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 100
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 58
nC
trⓘ - Rise Time: 95
nS
Cossⓘ -
Output Capacitance: 520
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.006(typ)
Ohm
Package:
TO220
SE80100GA
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE80100GA
Datasheet (PDF)
..1. Size:420K cn sino-ic
se80100ga.pdf 
SE80100GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =80VDSVoltage and Current Improved Shoot-Through R =6.0m @V =10DS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configurations
9.1. Size:169K onsemi
kse800 kse801 kse802 kse803.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
9.2. Size:536K cn sino-ic
se80130g.pdf
SE80130GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =80VDSoperation voltage. This device is suitable for R =3.6m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline
9.3. Size:471K cn sino-ic
se80130ga.pdf
SE80130GAN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =80VDSoperation voltage. This device is suitable for R =3.6m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline
9.4. Size:423K cn sino-ic
se80160g.pdf
SE80160GN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesFor a single MOSFETAdvanced trench technology to provideexcellent RDS(ON), low gate charge and low V =80VDSoperation voltage. This device is suitable for R =2.2m @V =10VDS(ON) GSusing as a load switch or in PWMapplications. Simple Drive Requirement Small Package Outline
Datasheet: WPB4002
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