SE8810A Specs and Replacement
Type Designator: SE8810A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 189 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT23-6
SE8810A substitution
- MOSFET ⓘ Cross-Reference Search
SE8810A datasheet
se8810a.pdf
SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810A Dual N-Channel Enhancement Mode Field Effect Transistor Revision A Features For a single mosfet VDSS = 20 V RDS(ON) ... See More ⇒
se8810.pdf
SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810 Dual N-Channel Enhancement Mode Field Effect Transistor Revision A Features For a single mosfet VDSS = 20 V RDS(ON) ... See More ⇒
Detailed specifications: SE80250G, SE8090A, SE8090G, SE8205A, SE8209, SE85130GA, SE85210, SE8810, TK10A60D, SE8830T, SE8830A, SED8830MP, SED8830, SED8830P, SED8830N, SE8831A, SE8841A
Keywords - SE8810A MOSFET specs
SE8810A cross reference
SE8810A equivalent finder
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SE8810A substitution
SE8810A replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: IPF06N03LA
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