SE8810A MOSFET. Datasheet pdf. Equivalent
Type Designator: SE8810A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 189 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT23-6
SE8810A Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SE8810A Datasheet (PDF)
..1. Size:334K cn sino-ic
se8810a.pdf
se8810a.pdf
SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810A Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet VDSS = 20 V RDS(ON)
8.1. Size:366K cn sino-ic
se8810.pdf
se8810.pdf
SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810 Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet VDSS = 20 V RDS(ON)
Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .
