SE8810A Datasheet and Replacement
Type Designator: SE8810A
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 189 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
Package: SOT23-6
SE8810A substitution
SE8810A Datasheet (PDF)
se8810a.pdf

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810A Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet VDSS = 20 V RDS(ON)
se8810.pdf

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810 Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet VDSS = 20 V RDS(ON)
Datasheet: SE80250G , SE8090A , SE8090G , SE8205A , SE8209 , SE85130GA , SE85210 , SE8810 , 13N50 , SE8830T , SE8830A , SED8830MP , SED8830 , SED8830P , SED8830N , SE8831A , SE8841A .
History: SED14N65G | TMAN11N90Z
Keywords - SE8810A MOSFET datasheet
SE8810A cross reference
SE8810A equivalent finder
SE8810A lookup
SE8810A substitution
SE8810A replacement
History: SED14N65G | TMAN11N90Z



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