All MOSFET. SE8810A Datasheet

 

SE8810A MOSFET. Datasheet pdf. Equivalent


   Type Designator: SE8810A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 7 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11 nC
   trⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23-6

 SE8810A Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SE8810A Datasheet (PDF)

 ..1. Size:334K  cn sino-ic
 se8810a.pdf

SE8810A SE8810A

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810A Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet VDSS = 20 V RDS(ON)

 8.1. Size:366K  cn sino-ic
 se8810.pdf

SE8810A SE8810A

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810 Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet VDSS = 20 V RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TPB65R380C | WMB048NV6HG4

 

 
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