All MOSFET. SE8810A Datasheet

 

SE8810A Datasheet and Replacement


   Type Designator: SE8810A
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23-6
 

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SE8810A Datasheet (PDF)

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SE8810A

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810A Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet VDSS = 20 V RDS(ON)

 8.1. Size:366K  cn sino-ic
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SE8810A

SHANGHAI Feb 2008 MICROELECTRONICS CO., LTD. SE8810 Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A Features For a single mosfet VDSS = 20 V RDS(ON)

Datasheet: SE80250G , SE8090A , SE8090G , SE8205A , SE8209 , SE85130GA , SE85210 , SE8810 , TK10A60D , SE8830T , SE8830A , SED8830MP , SED8830 , SED8830P , SED8830N , SE8831A , SE8841A .

History: SIHH180N60E

Keywords - SE8810A MOSFET datasheet

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