All MOSFET. SED8830P Datasheet

 

SED8830P Datasheet and Replacement


   Type Designator: SED8830P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 62 nS
   Cossⓘ - Output Capacitance: 189 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
   Package: DFN2X5
 

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SED8830P Datasheet (PDF)

 ..1. Size:503K  cn sino-ic
 se8830t se8830a sed8830mp sed8830 sed8830p sed8830n.pdf pdf_icon

SED8830P

SHANGHAI Feb 2013 MICROELECTRONICS CO., LTD. SE8830T/8830A SED8830MP/8830/8830P/SED8830N Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A 8830 Series Pin Assignment Features For a single mosfet VDSS = 20 V RDS(ON)

 7.1. Size:581K  cn sino-ic
 sed8830a.pdf pdf_icon

SED8830P

SHANGHAI Feb 2010MICROELECTRONICS CO., LTD.SED8830ADual N-Channel Enhancement Mode Field Effect TransistorRevision:AFeaturesFor a single mosfet VDSS =20V RDS(ON)=14.5m@VGS=4.5V RDS(ON)=22m@VGS=2.5VApplicationsBattery protectionLoad switchPower managementConstructionSilicon epitaxial planerAbsolute Maximum RatingsParamet Symbol Rating

 9.1. Size:407K  cn sino-ic
 sed8840.pdf pdf_icon

SED8830P

Jul 2014SED8840Dual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =20VDSVoltage and Current Improved Shoot-Through R =8.5m @V =4.5VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin c

Datasheet: SE85130GA , SE85210 , SE8810 , SE8810A , SE8830T , SE8830A , SED8830MP , SED8830 , RFP50N06 , SED8830N , SE8831A , SE8841A , SE8N65A , SE9435 , SE9926 , SED10070GG , SED10080GG .

History: JMTC025N04D | 2SK1684 | AP2323GN-HF | WMJ10N100D1 | WMQ30N02T1 | BSC066N06NS | PJM3401PSC

Keywords - SED8830P MOSFET datasheet

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