SED8830N PDF and Equivalents Search

 

SED8830N Specs and Replacement

Type Designator: SED8830N

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 62 nS

Cossⓘ - Output Capacitance: 189 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm

Package: DFN2X3-6

SED8830N substitution

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SED8830N datasheet

 ..1. Size:503K  cn sino-ic
 se8830t se8830a sed8830mp sed8830 sed8830p sed8830n.pdf pdf_icon

SED8830N

SHANGHAI Feb 2013 MICROELECTRONICS CO., LTD. SE8830T/8830A SED8830MP/8830/8830P/SED8830N Dual N-Channel Enhancement Mode Field Effect Transistor Revision A 8830 Series Pin Assignment Features For a single mosfet VDSS = 20 V RDS(ON) ... See More ⇒

 7.1. Size:581K  cn sino-ic
 sed8830a.pdf pdf_icon

SED8830N

SHANGHAI Feb 2010 MICROELECTRONICS CO., LTD. SED8830A Dual N-Channel Enhancement Mode Field Effect Transistor Revision A Features For a single mosfet VDSS =20V RDS(ON)=14.5m @VGS=4.5V RDS(ON)=22m @VGS=2.5V Applications Battery protection Load switch Power management Construction Silicon epitaxial planer Absolute Maximum Ratings Paramet Symbol Rating ... See More ⇒

 9.1. Size:407K  cn sino-ic
 sed8840.pdf pdf_icon

SED8830N

Jul 2014 SED8840 Dual N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =20V DS Voltage and Current Improved Shoot-Through R =8.5m @V =4.5V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin c... See More ⇒

Detailed specifications: SE85210, SE8810, SE8810A, SE8830T, SE8830A, SED8830MP, SED8830, SED8830P, 2SK3568, SE8831A, SE8841A, SE8N65A, SE9435, SE9926, SED10070GG, SED10080GG, SED14N65G

Keywords - SED8830N MOSFET specs

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