SED8830N Datasheet and Replacement
Type Designator: SED8830N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
trⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 189 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
Package: DFN2X3-6
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SED8830N Datasheet (PDF)
se8830t se8830a sed8830mp sed8830 sed8830p sed8830n.pdf

SHANGHAI Feb 2013 MICROELECTRONICS CO., LTD. SE8830T/8830A SED8830MP/8830/8830P/SED8830N Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A 8830 Series Pin Assignment Features For a single mosfet VDSS = 20 V RDS(ON)
sed8830a.pdf

SHANGHAI Feb 2010MICROELECTRONICS CO., LTD.SED8830ADual N-Channel Enhancement Mode Field Effect TransistorRevision:AFeaturesFor a single mosfet VDSS =20V RDS(ON)=14.5m@VGS=4.5V RDS(ON)=22m@VGS=2.5VApplicationsBattery protectionLoad switchPower managementConstructionSilicon epitaxial planerAbsolute Maximum RatingsParamet Symbol Rating
sed8840.pdf

Jul 2014SED8840Dual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =20VDSVoltage and Current Improved Shoot-Through R =8.5m @V =4.5VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin c
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
History: DMG9N65CT | HLML6401 | NVD4810N | 2SK4107 | HM5853 | KXU05N25 | AP85T03GH-HF
Keywords - SED8830N MOSFET datasheet
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History: DMG9N65CT | HLML6401 | NVD4810N | 2SK4107 | HM5853 | KXU05N25 | AP85T03GH-HF



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