SED8830N MOSFET. Datasheet pdf. Equivalent
Type Designator: SED8830N
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 8 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 11 nC
trⓘ - Rise Time: 62 nS
Cossⓘ - Output Capacitance: 189 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0145 Ohm
Package: DFN2X3-6
SED8830N Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SED8830N Datasheet (PDF)
se8830t se8830a sed8830mp sed8830 sed8830p sed8830n.pdf
SHANGHAI Feb 2013 MICROELECTRONICS CO., LTD. SE8830T/8830A SED8830MP/8830/8830P/SED8830N Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A 8830 Series Pin Assignment Features For a single mosfet VDSS = 20 V RDS(ON)
sed8830a.pdf
SHANGHAI Feb 2010MICROELECTRONICS CO., LTD.SED8830ADual N-Channel Enhancement Mode Field Effect TransistorRevision:AFeaturesFor a single mosfet VDSS =20V RDS(ON)=14.5m@VGS=4.5V RDS(ON)=22m@VGS=2.5VApplicationsBattery protectionLoad switchPower managementConstructionSilicon epitaxial planerAbsolute Maximum RatingsParamet Symbol Rating
sed8840.pdf
Jul 2014SED8840Dual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =20VDSVoltage and Current Improved Shoot-Through R =8.5m @V =4.5VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin c
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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