All MOSFET. SED3032G Datasheet

 

SED3032G Datasheet and Replacement


   Type Designator: SED3032G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 70 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 102 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0085 Ohm
   Package: DFN5X6EP2
 

 SED3032G substitution

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SED3032G Datasheet (PDF)

 ..1. Size:430K  cn sino-ic
 sed3032g.pdf pdf_icon

SED3032G

SED3032GDual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =30VDSVoltage and Current Improved Shoot-Through R =7.4m@V =10VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin configuratio

 8.1. Size:494K  cn sino-ic
 sed3030m.pdf pdf_icon

SED3032G

SED3030MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =7.4m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra

 9.1. Size:465K  cn sino-ic
 sed3022m.pdf pdf_icon

SED3032G

SED3022MDual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =16m@V =10VDS(ON) GSPin configurationsSee Diagram belowDFN3x3MAbsolute Maximum RatingsParame

 9.2. Size:364K  cn sino-ic
 sed3080m.pdf pdf_icon

SED3032G

SED3080MN-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThis type used advanced trench technology and For a single MOSFETdesign to provide excellent RDS(ON) with low gate V =30VDScharge. It can be used in a wide variety of application R =4.5m@V =10VDS(ON) GSPin configurationsSee Diagram belowAbsolute Maximum RatingsParameter Symbol Ra

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Datasheet: SE9435 , SE9926 , SED10070GG , SED10080GG , SED14N65G , SED2145 , SED3022M , SED3030M , 2N60 , SED3080M , SED3081M , SED30P30M , SED4060G , SED4060GM , SED5852 , SED8830A , SED8840 .

History: 2SK3526L | BSB017N03LX3G

Keywords - SED3032G MOSFET datasheet

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 SED3032G replacement

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