SED30P30M MOSFET Datasheet: P-Ch, 30V, 30A. Full specification with pinout and replacement list

SED30P30M Specs and Replacement

Type Designator: SED30P30M

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 16.5 nS

Cossⓘ - Output Capacitance: 945 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.011 Ohm

Package: DFN3X3

SED30P30M substitution

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SED30P30M datasheet

..1. Size:357K cn sino-ic
sed30p30m.pdf pdf_icon

Sep 2015 SED30P30M P-Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V = -30V DS operation voltage. This device is suitable for R =8.5m @V =-10V DS(ON) GS using as a load switch or in PWM applications. Simple Drive Requirement Small Packa... See More ⇒

9.1. Size:465K cn sino-ic
sed3022m.pdf pdf_icon

SED3022M Dual N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate V =30V DS charge. It can be used in a wide variety of application R =16m @V =10V DS(ON) GS Pin configurations See Diagram below DFN3x3M Absolute Maximum Ratings Parame... See More ⇒

9.2. Size:430K cn sino-ic
sed3032g.pdf pdf_icon

SED3032G Dual N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =30V DS Voltage and Current Improved Shoot-Through R =7.4m @V =10V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin configuratio... See More ⇒

9.3. Size:494K cn sino-ic
sed3030m.pdf pdf_icon

SED3030M N-Channel Enhancement-Mode MOSFET Revision A General Description Features This type used advanced trench technology and For a single MOSFET design to provide excellent RDS(ON) with low gate V =30V DS charge. It can be used in a wide variety of application R =7.4m @V =10V DS(ON) GS Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Ra... See More ⇒