SED8840 Datasheet and Replacement
Type Designator: SED8840
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 220 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: DFN5X2
SED8840 substitution
SED8840 Datasheet (PDF)
sed8840.pdf

Jul 2014SED8840Dual N-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V =20VDSVoltage and Current Improved Shoot-Through R =8.5m @V =4.5VDS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin c
sed8830a.pdf

SHANGHAI Feb 2010MICROELECTRONICS CO., LTD.SED8830ADual N-Channel Enhancement Mode Field Effect TransistorRevision:AFeaturesFor a single mosfet VDSS =20V RDS(ON)=14.5m@VGS=4.5V RDS(ON)=22m@VGS=2.5VApplicationsBattery protectionLoad switchPower managementConstructionSilicon epitaxial planerAbsolute Maximum RatingsParamet Symbol Rating
se8830t se8830a sed8830mp sed8830 sed8830p sed8830n.pdf

SHANGHAI Feb 2013 MICROELECTRONICS CO., LTD. SE8830T/8830A SED8830MP/8830/8830P/SED8830N Dual N-Channel Enhancement Mode Field Effect Transistor Revision:A 8830 Series Pin Assignment Features For a single mosfet VDSS = 20 V RDS(ON)
Datasheet: SED3032G , SED3080M , SED3081M , SED30P30M , SED4060G , SED4060GM , SED5852 , SED8830A , IRF830 , APM2300CA , APM2301CA , APM2306A , APM2309A , APM2317A , APM2324AA , APM2360A , SM1A16PUB .
History: 2SK538 | STL70N10F3 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G | FDZ375P
Keywords - SED8840 MOSFET datasheet
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History: 2SK538 | STL70N10F3 | 2SK3541MGP | SFS12R08PNF | NTHS4101PT1G | FDZ375P



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