SED8840 Specs and Replacement
Type Designator: SED8840
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 2.6 nS
Cossⓘ - Output Capacitance: 220 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0095 Ohm
Package: DFN5X2
SED8840 substitution
- MOSFET ⓘ Cross-Reference Search
SED8840 datasheet
sed8840.pdf
Jul 2014 SED8840 Dual N-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V =20V DS Voltage and Current Improved Shoot-Through R =8.5m @V =4.5V DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin c... See More ⇒
sed8830a.pdf
SHANGHAI Feb 2010 MICROELECTRONICS CO., LTD. SED8830A Dual N-Channel Enhancement Mode Field Effect Transistor Revision A Features For a single mosfet VDSS =20V RDS(ON)=14.5m @VGS=4.5V RDS(ON)=22m @VGS=2.5V Applications Battery protection Load switch Power management Construction Silicon epitaxial planer Absolute Maximum Ratings Paramet Symbol Rating ... See More ⇒
se8830t se8830a sed8830mp sed8830 sed8830p sed8830n.pdf
SHANGHAI Feb 2013 MICROELECTRONICS CO., LTD. SE8830T/8830A SED8830MP/8830/8830P/SED8830N Dual N-Channel Enhancement Mode Field Effect Transistor Revision A 8830 Series Pin Assignment Features For a single mosfet VDSS = 20 V RDS(ON) ... See More ⇒
Detailed specifications: SED3032G, SED3080M, SED3081M, SED30P30M, SED4060G, SED4060GM, SED5852, SED8830A, 7N60, APM2300CA, APM2301CA, APM2306A, APM2309A, APM2317A, APM2324AA, APM2360A, SM1A16PUB
Keywords - SED8840 MOSFET specs
SED8840 cross reference
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