APM2360A Specs and Replacement
Type Designator: APM2360A
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 1.56 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.2 nS
Cossⓘ -
Output Capacitance: 29 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.104 Ohm
Package: SOT23
- MOSFET ⓘ Cross-Reference Search
APM2360A datasheet
..1. Size:230K sino
apm2360a.pdf 
APM2360A N-Channel Enhancement Mode MOSFET Features Pin Description 60V/2.7A , D RDS(ON)=104m (max.) @ VGS=10V S RDS(ON)=130m (max.) @ VGS=4.5V G 100% UIS + Rg Tested Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in DC/AC Inverer Systems. S N-Channel MOSFET Ordering and Marking Informa... See More ⇒
9.1. Size:403K shenzhen
apm2317.pdf
Shenzhen Tuofeng Semiconductor Technology Co., Ltd APM2317 P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.5A , RDS(ON)=28m (typ.) @ VGS=-4.5V RDS(ON)=38m (typ.) @ VGS=-2.5V RDS(ON)=55m (typ.) @ VGS=-1.8V Super High Dense Cell Design Reliable and Rugged S Lead Free and Green Devices Available (RoHS Compliant) Applications G Power Management... See More ⇒
9.2. Size:133K anpec
apm2318a.pdf
APM2318A N-Channel Enhancement Mode MOSFET Features Pin Description 30V/3A , D RDS(ON)=35m (typ.) @ VGS=10V RDS(ON)=40m (typ.) @ VGS=4.5V G RDS(ON)=60m (typ.) @ VGS=2.5V S Super High Dense Cell Design Top View of SOT-23 Reliable and Rugged Lead Free Available (RoHS Compliant) D Applications G Power Management in... See More ⇒
9.3. Size:497K sino
apm2304a.pdf
APM2304A N-Channel Enhancement Mode MOSFET Features Pin Description 30V/5A, D RDS(ON)= 22m (typ.) @ VGS= 10V S RDS(ON)= 32m (typ.) @ VGS= 4.5V G Super High Dense Cell Design Top View of SOT-23-3 Reliable and Rugged Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Battery Power... See More ⇒
9.4. Size:650K sino
apm2317a.pdf
APM2317A P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-4.5A , D RDS(ON)=28m (typ.) @ VGS=-4.5V S RDS(ON)=38m (typ.) @ VGS=-2.5V G RDS(ON)=55m (typ.) @ VGS=-1.8V Top View of SOT-23-3 Super High Dense Cell Design Reliable and Rugged S Lead Free and Green Devices Available (RoHS Compliant) Applications G Power Management in Notebook Com... See More ⇒
9.5. Size:166K sino
apm2324aa.pdf
APM2324AA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/3A, D RDS(ON)= 50m (Typ.) @ VGS= 4.5V S RDS(ON)= 65m (Typ.) @ VGS= 2.5V G RDS(ON)= 120m (Typ.) @ VGS= 1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available (RoHS Compliant) D G Applications Power Management in Notebook Computer, Portable Equipment and Ba... See More ⇒
9.6. Size:169K sino
apm2301ca.pdf
APM2301CA P-Channel Enhancement Mode MOSFET Features Pin Description -20V/-3A D RDS(ON)= 70m (max.) @ VGS= -4.5V S RDS(ON)= 115m (max.) @ VGS= -2.5V G RDS(ON)= 250m (max.) @ VGS= -1.8V Reliable and Rugged Top View of SOT-23 Lead Free and Green Devices Available ( RoHS Compliant) D G Applications Power Management in Notebook Computer, Portable Equipment and... See More ⇒
9.7. Size:498K sino
apm2303a.pdf
APM2303A P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-4A, D RDS(ON)=55m (max.) @ VGS=-10V S RDS(ON)=70m (max.) @ VGS=-4.5V G RDS(ON)=115m (max.) @ VGS=-2.5V Top View of SOT-23-3 Super High Dense Cell Design D Reliable and Rugged Enhance ESD Cell Protection Lead Free and Green Devices Available (RoHS Compliant) G Applications P... See More ⇒
9.8. Size:305K sino
apm2306a.pdf
APM2306A N-Channel Enhancement Mode MOSFET Features Pin Description 30V/3.5A , D RDS(ON)= 65m (max.) @ VGS=10V S RDS(ON)= 90m (max.) @ VGS=5V G Super High Dense Cell Design Reliable and Rugged Top View of SOT-23-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered Sys... See More ⇒
9.9. Size:167K sino
apm2300ca.pdf
APM2300CA N-Channel Enhancement Mode MOSFET Features Pin Description 20V/6A , D RDS(ON)=25m (typ.) @ VGS=10V S RDS(ON)=32m (typ.) @ VGS=4.5V G RDS(ON)=40m (typ.) @ VGS=2.5V RDS(ON)=65m (typ.) @ VGS=1.8V Top View of SOT-23 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Notebook Computer, Port... See More ⇒
9.10. Size:265K sino
apm2309a.pdf
APM2309A P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-2.2A, D RDS(ON)= 105m (typ.) @ VGS= -10V S RDS(ON)= 165m (typ.) @ VGS= -4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of SOT-23-3 (RoHS Compliant) D Applications G Power Management in Notebook Computer, Portable Equipment and Battery Powered Systems. S P-Channel M... See More ⇒
9.11. Size:410K cn shikues
apm2324a.pdf
APM2324A N-Channel Enhancement Mode MOSFET Channel Enhancement Mode MOSFET Feature 20V/3A, RDS(ON) = 80m (MAX) @VGS = 4.5V. = 4.5V. RDS(ON) = 90m (MAX) @VGS = 2.5V. = 2.5V. Super High dense cell design for extremely low R Super High dense cell design for extremely low RDS(ON) . Reliable and Rugged. SC-59 for Surface Mount Package. Applications Power ... See More ⇒
9.12. Size:695K cn shikues
apm2301aac.pdf
APM2301AAC P-Channel Enhancement Mode MOSFET Feature DS(ON) GS -20V/-3A R = 120m (MAX) @V = -4.5V. DS(ON) GS R = 150m (MAX) @V = -2.5V. DS(ON) Super High dense cell design for extremely low R Reliable and Rugged SC-59 for Surface Mount Package SC-59 Applications Power Management Portable Equipment and Battery Powered Systems. A T =25 U... See More ⇒
9.13. Size:872K cn vbsemi
apm2305ac.pdf
APM2305AC www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2... See More ⇒
9.14. Size:2321K cn vbsemi
apm2300cac.pdf
APM2300CAC www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/D... See More ⇒
9.15. Size:1476K cn vbsemi
apm2323aac.pdf
APM2323AAC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS ... See More ⇒
9.16. Size:870K cn vbsemi
apm2321ac.pdf
APM2321AC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIO... See More ⇒
9.17. Size:2336K cn vbsemi
apm2308ac.pdf
APM2308AC www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.030 at VGS = 10 V TrenchFET Power MOSFET 6.5 30 4.5 nC 100 % Rg Tested 0.033 at VGS = 4.5 V 6.0 Compliant to RoHS Directive 2002/95/EC APPLICATIONS DC/DC Converter D TO-236 (SOT-23) ... See More ⇒
9.18. Size:775K cn vbsemi
apm2301ac.pdf
APM2301AC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIO... See More ⇒
9.19. Size:1477K cn vbsemi
apm2321aac.pdf
APM2321AAC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATI... See More ⇒
9.20. Size:1479K cn vbsemi
apm2309ac.pdf
APM2309AC www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2... See More ⇒
9.21. Size:2963K cn vbsemi
apm2303ac.pdf
APM2303AC www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2... See More ⇒
9.22. Size:851K cn vbsemi
apm2315ac.pdf
APM2315AC www.VBsemi.tw P-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET 100 % Rg Tested VDS (V) RDS(on) ( ) Typ. ID (A)a Qg (Typ.) 0.046 at VGS = - 10 V - 5.6 0.049 at VGS = - 6 V - 5 11.4 nC - 30 APPLICATIONS 0.054 at VGS = - 4.5 V -4.5 For Mobile Computing - Load Switch - Notebook Adaptor Switch S TO-236 - DC/DC Converter (SOT-2... See More ⇒
9.23. Size:2321K cn vbsemi
apm2314ac.pdf
APM2314AC www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC... See More ⇒
9.24. Size:854K cn vbsemi
apm2317ac.pdf
APM2317AC www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIO... See More ⇒
Detailed specifications: SED8830A, SED8840, APM2300CA, APM2301CA, APM2306A, APM2309A, APM2317A, APM2324AA, AON7403, SM1A16PUB, SM1A63NHUC, SM3419NHQA, SM3429BSQA, SM4033NHKP, SM4500NHKP, SM4512NHKP, SM6166NHKP
Keywords - APM2360A MOSFET specs
APM2360A cross reference
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