VS5814DS
MOSFET. Datasheet pdf. Equivalent
Type Designator: VS5814DS
Marking Code: 5814DS
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 2
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4
V
|Id|ⓘ - Maximum Drain Current: 9
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 22
nC
trⓘ - Rise Time: 4.4
nS
Cossⓘ -
Output Capacitance: 95
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.021
Ohm
Package:
SOP8
VS5814DS
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
VS5814DS
Datasheet (PDF)
..1. Size:745K cn vanguard
vs5814ds.pdf 
VS5814DS 55V/9A Dual N-Channel Advanced Power MOSFET Features V DS 55 V R DS(on),TYP@ VGS=10 V 16 m Dual N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 22 m Enhancement mode I D 9 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology SOP8 Fast Switching and High efficiency Pb-free lead plating; RoHS compliant Tape an
..2. Size:1048K cn vgsemi
vs5814ds.pdf
VS5814DS55V/9A Dual N-Channel Advanced Power MOSFETFeaturesV DS 55 VR DS(on),TYP@ VGS=10 V 16 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 22 m Enhancement modeI D 9 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS TechnologySOP8 Fast Switching and High efficiency Pb-free lead plating; RoHS compliantPart ID Package Type Ma
9.1. Size:603K cn vanguard
vs5810as.pdf
VS5810AS 55V/15A N-Channel Advanced Power MOSFET V DS 55 V Features R DS(on),TYP@ VGS=10 V 6.8 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9.5 m Enhancement mode I D 15 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology SOP8 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part I
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