VS5814DS Datasheet and Replacement
Type Designator: VS5814DS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4.4 nS
Cossⓘ - Output Capacitance: 95 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.021 Ohm
Package: SOP8
VS5814DS substitution
VS5814DS Datasheet (PDF)
vs5814ds.pdf

VS5814DS 55V/9A Dual N-Channel Advanced Power MOSFET Features V DS 55 V R DS(on),TYP@ VGS=10 V 16 m Dual N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 22 m Enhancement mode I D 9 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology SOP8 Fast Switching and High efficiency Pb-free lead plating; RoHS compliant Tape an
vs5814ds.pdf

VS5814DS55V/9A Dual N-Channel Advanced Power MOSFETFeaturesV DS 55 VR DS(on),TYP@ VGS=10 V 16 m Dual N-Channel5V Logic Level ControlR DS(on),TYP@ VGS=4.5 V 22 m Enhancement modeI D 9 A Low on-resistance RDS(on) @ VGS=4.5 V VitoMOS TechnologySOP8 Fast Switching and High efficiency Pb-free lead plating; RoHS compliantPart ID Package Type Ma
vs5810as.pdf

VS5810AS 55V/15A N-Channel Advanced Power MOSFET V DS 55 V Features R DS(on),TYP@ VGS=10 V 6.8 m N-Channel5V Logic Level Control R DS(on),TYP@ VGS=4.5 V 9.5 m Enhancement mode I D 15 A Very low on-resistance RDS(on) @ VGS=4.5 V VitoMOS Technology SOP8 100% Avalanche test Pb-free lead plating; RoHS compliant Tape and reel Part I
Datasheet: VS4080AI , VS4410AT , VS4518AD , VS4602AP , VS4604AP , VS4618AE , VS4N65CD , VS5810AS , AON7408 , VS6016HS-A , VS6018AS , VS6018BS , VS6038AD , VS6412AE , VS6412ASL , VS6614GS , VS6640AC .
History: GMM3x100-01X1-SMD
Keywords - VS5814DS MOSFET datasheet
VS5814DS cross reference
VS5814DS equivalent finder
VS5814DS lookup
VS5814DS substitution
VS5814DS replacement
History: GMM3x100-01X1-SMD



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