2SK294 MOSFET. Datasheet pdf. Equivalent

isc N-Channel MOSFET Transistor 2SK294FEATURESDrain Current : I = 5A@ T =25D CDrain Source Voltage: V = 80V(Min)DSSStatic Drain-Source On-Resistance: R = 0.56(Max) @V =15VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr

DATA SHEETMOS FIELD EFFECT TRANSISTORS2SK2941SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTIONPACKAGE DIMENSIONSThis product is n-Chanel MOS Field Effect Transistor designed highinmillimeterscurrent switching application.FEATURE10.6 MAX. 4.8 MAX. Low On-Resistance3.60.21.30.210.0RDS(on)1 = 14 m Typ. (VGS = 10 V, ID =18 A)RDS(on)2 = 22 m T

2SK2949 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK2949 Chopper Regulator, DC-DC Converter and Motor Drive Applications Unit: mm Low drain-source ON resistance : RDS (ON) = 0.4 (typ.) High forward transfer admittance : |Y | = 8.0 S (typ.) fs Low leakage current : I = 100 A (max) (V = 400 V) DSS DS Enhancement-mode : Vth = 2.0~4.0 V (

To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid Renesas Electronics document. We appreciate your understanding.

2SK2940(L), 2SK2940(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1054-0400 (Previous: ADE-208-563B) Rev.4.00 Sep 07, 2005 Features Low on-resistance RDS =0.010 typ. High speed switching 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0004AE-A RENESAS Package code: PRSS0004AE-B(Package name: LDPAK(

2SK2943External dimensions 1 ...... FM20Absolute Maximum Ratings Electrical Characteristics (Ta = 25C) (Ta = 25C)RatingsSymbol Ratings Unit Symbol Unit Conditionsmin typ maxV 900 V I = 100A, V = 0V(BR) DSS D GS V 900 VDSSI 100 nA V = 30VGSS GS V 30 VGSSI 100 A V = 900V, V = 0VDSS DS GS I 3ADV 2.0 4.0 V V = 10V, I = 1mATH DS D I 12 A

isc N-Channel MOSFET Transistor 2SK2940LFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid

isc N-Channel MOSFET Transistor 2SK2949LFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

isc N-Channel MOSFET Transistor 2SK2949SFEATURESDrain Current : I = 10A@ T =25D CDrain Source Voltage: V = 400V(Min)DSSStatic Drain-Source On-Resistance: R = 0.55(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

INCHANGE Semiconductorisc N-Channel MOSFET Transistor 2SK2943FEATURESWith TO-220F packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

isc N-Channel MOSFET Transistor 2SK2941FEATURESDrain Current : I = 35A@ T =25D CDrain Source Voltage: V = 30V(Min)DSSStatic Drain-Source On-Resistance: R = 20m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

isc N-Channel MOSFET Transistor 2SK2940SFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid