SM140R50CT1TL MOSFET. Datasheet pdf. Equivalent
Type Designator: SM140R50CT1TL
Marking Code: 140R50C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 168 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
|Id|ⓘ - Maximum Drain Current: 24 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 70 nC
trⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 370 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO220
SM140R50CT1TL Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM140R50CT1TL Datasheet (PDF)
sm140r50c.pdf
SM140R50C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFETDescription ID 24A SM140R50C is power MOSFET using advanced super junction technology that can realize very low VDSS 500V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.14(VGS=10V, ID=12A) technology. These user friendly devi
sm1402nss.pdf
SM1402NSS N-Channel Enhancement Mode MOSFETFeatures Pin Description 60V/0.4A,D RDS(ON)= 2.2(max.) @ VGS=10VS RDS(ON)= 2.6(max.) @ VGS=4.5VG ESD ProtectionTop View of SC-70 Reliable and Rugged Lead Free and Green Devices AvailableD(RoHS Compliant)GApplications High Speed Switching. Analog Switching Application.SN-Channel MOSFETOrdering and Ma
sm1401pss.pdf
SM1401PSS P-Channel Enhancement Mode MOSFETFeatures Pin Description -20V/-2.8A, DRDS(ON)= 92m (Max.) @ VGS=-4.5VSRDS(ON)= 135m (Max.) @ VGS=-2.5VGRDS(ON)= 220m (Max.) @ VGS=-1.8VTop View of SC-70 Super High Dense Cell Design Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Notebook Computer,Portabl
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .