SM180R65CT2TL Specs and Replacement
Type Designator: SM180R65CT2TL
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 20 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 39 nS
Cossⓘ - Output Capacitance: 1480 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.18 Ohm
Package: TO220F
SM180R65CT2TL substitution
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SM180R65CT2TL datasheet
sm180r65c.pdf
SM180R65C 30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFET Description ID 20A SM180R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson (max.) 0.18 (VGS=10V, ID=10A) technology. These user friendly dev... See More ⇒
Detailed specifications: 2SK3322-ZK, YTF150, YTF153, YTF250, YTF251, SM140R50CT2TL, SM140R50CT1TL, SM140R50CT8TL, IRF3205, SM180R65CT1TL, SM180R65CT8TL, SM2301, SM2302, SM2305, SM2306, SM2312SRL, SM2314
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