All MOSFET. SM420R65CT1TL Datasheet

 

SM420R65CT1TL MOSFET. Datasheet pdf. Equivalent


   Type Designator: SM420R65CT1TL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 39 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 240 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.42 Ohm
   Package: TO220

 SM420R65CT1TL Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SM420R65CT1TL Datasheet (PDF)

 8.1. Size:817K  cn sps
 sm420r50c.pdf

SM420R65CT1TL SM420R65CT1TL

SM420R50C30V /36A Single N Power MOSFET N-Channel Super Junction Power MOSFETDescription ID 11A SM420R65C is power MOSFET using advanced super junction technology that can realize very low VDSS 650V on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling Rdson(Max) 0.42(VGS=10V, ID=5.5A) technology. These user friendly devic

 9.1. Size:410K  huashuo
 hsm4204.pdf

SM420R65CT1TL SM420R65CT1TL

HSM4204 Dual N-Ch 40V Fast Switching MOSFETs Description Product Summary The HSM4204 is the high cell density trenched N-VDS 40 V ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck RDS(ON),typ 12 m converter applications. The HSM4204 meet the RoHS and Green Product ID 7.5 A requirement, 100% EAS guaranteed with full function rel

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History: IRF7N1405

 

 
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