SM4441 MOSFET. Datasheet pdf. Equivalent
Type Designator: SM4441
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 4 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 8 nC
trⓘ - Rise Time: 10.8 nS
Cossⓘ - Output Capacitance: 85 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: SOP8
SM4441 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM4441 Datasheet (PDF)
sm4441.pdf
SM4441-60V P - Channel MOSFET Description -60V /-4A Power MOSFETVery low on-resistance RDS(on) @ VGS=4.5 VPb-free lead plating; RoHS compliant-60 VV DS91.0 mRDS(on),TYP@VGS=10V143.0 mRDS(on),TYP@VGS=4.5-4 AID Ordering Information Ordering Number Pin AssignmentPackage Packing1 2 3 4 5 6 7Lead Free Halogen Free 8SM4441PR GSM4441PR L SO
gsm4440.pdf
60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power
gsm4447.pdf
GSM4447 40V P-Channel Enhancement Mode MOSFET Product Description Features GSM4447, P-Channel enhancement mode -40V/-10A,RDS(ON)=40m@VGS=-10V MOSFET, uses Advanced Trench Technology to -40V/-8A,RDS(ON)=55m@VGS=-4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
gsm4440w.pdf
GSM4440W 60V N-Channel Enhancement Mode MOSFET Product Description Features GSM4440W, N-Channel enhancement mode 60V/6.8A,RDS(ON)=42m@VGS=10V MOSFET, uses Advanced Trench Technology to 60V/5.6A,RDS(ON)=50m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low
sm4447a.pdf
SM4447A-30V P - Channel MOSFET Description -30V /-17A Power MOSFETVery low on-resistance RDS(on) @ VGS=4.5 VPb-free lead plating; RoHS compliant-30 VV DS12.0 m RDS(on),TYP@VGS=10V16.5 mRDS(on),TYP@VGS=4.5-17 AID Ordering Information Ordering Number Pin AssignmentPackage Packing1 2 3 4 5 6 7Lead Free Halogen Free 8SM4447APR GSM4447APR
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
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