All MOSFET. FCH47N60F Datasheet

 

FCH47N60F MOSFET. Datasheet pdf. Equivalent

Type Designator: FCH47N60F

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 417 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 47 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 210 nC

Maximum Drain-Source On-State Resistance (Rds): 0.073 Ohm

Package: TO247_TO3P_TO3PF

FCH47N60F Transistor Equivalent Substitute - MOSFET Cross-Reference Search

FCH47N60F Datasheet (PDF)

1.1. fch47n60f.pdf Size:197K _fairchild_semi

FCH47N60F
FCH47N60F

February TM SuperFET FCH47N60F _F133 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. RDS(on) = 0.062? balance mechanism for outstanding low on-resistance and Fast Recovery Type ( trr = 240ns) lower gate charge performance. Ultra Low Gate Cha

1.2. fch47n60f f085.pdf Size:382K _fairchild_semi

FCH47N60F
FCH47N60F

October 2013 FCH47N60F_F085 N-Channel MOSFET 600V, 47A, 75mΩ D Features Typ rDS(on) = 66mΩ at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47A G UIS Capability RoHS Compliant TO-247 Qualified to AEC Q101 G S D S Description SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For curren

 2.1. fch47n60 f133.pdf Size:286K _upd-mosfet

FCH47N60F
FCH47N60F

February TM SuperFET FCH47N60_F133 Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.058Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=210nC) lower gate charge performance. This advanced technology has

2.2. fch47n60.pdf Size:286K _fairchild_semi

FCH47N60F
FCH47N60F

February TM SuperFET FCH47N60_F133 Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lower gate charge performance. This advanced technology has been tailored

 2.3. fch47n60n.pdf Size:599K _fairchild_semi

FCH47N60F
FCH47N60F

May 2010 SupreMOSTM FCH47N60N N-Channel MOSFET 600V, 47A, 62m? Features Description RDS(on) = 51.5m? ( Typ.)@ VGS = 10V, ID =23.5 A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge ( Typ.Qg =115nC) process that differentiates it from preceding multi-epi based technologies. By utilizing thi

2.4. fch47n60 f085.pdf Size:381K _fairchild_semi

FCH47N60F
FCH47N60F

November 2013 FCH47N60_F085 N-Channel MOSFET 600V, 47A, 79mΩ D Features Typ rDS(on) = 64mΩ at VGS = 10V, ID = 47A Typ Qg(tot) = 187nC at VGS = 10V, ID = 47A G UIS Capability RoHS Compliant TO-247 Qualified to AEC Q101 G S D S Description SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For curren

 2.5. fch47n60nf.pdf Size:295K _fairchild_semi

FCH47N60F
FCH47N60F

January 2011 SupreMOSTM FCH47N60NF N-Channel MOSFET, FRFET 600V, 47A, 65m? Features Description RDS(on) = 57.5m? (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchilds next generation of high voltage super-junction MOSFETs, employs a deep trench filling Ultra Low Gate Charge (Typ. Qg = 121nC) process that differentiates it from preceding multi-epi based technologies. By

2.6. fch47n60 f133 fca47n60 fca47n60 f109.pdf Size:1062K _fairchild_semi

FCH47N60F
FCH47N60F

December 2008 TM SuperFET FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Features Description 650V @TJ = 150C SuperFETTM is, Fairchilds proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge Typ. Rds(on)=0.058? balance mechanism for outstanding low on-resistance and Ultra low gate charge (typ. Qg=210nC) lower gate charge

Datasheet: IRFP333 , IRFP340 , IRFP340A , IRFP341 , IRFP342 , IRFP343 , IRFP344 , IRFP350 , 75339P , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRFP354 , IRFP360 , IRFP360LC .

 
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