SM4803APRL Specs and Replacement
Type Designator: SM4803APRL
Marking Code: 4803
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
|VGSth|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
Qg ⓘ - Total Gate Charge: 4.6 nC
tr ⓘ - Rise Time: 4.4 nS
Cossⓘ -
Output Capacitance: 100 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.074 Ohm
Package: SOP8
- MOSFET ⓘ Cross-Reference Search
SM4803APRL datasheet
..1. Size:595K cn sps
sm4803aprl.pdf 
SM4803APRL -30V /-5A Dual 2P Power MOSFET C C03C C -30V /-5A Dual 2P Power MOSFET 5C03C General Description -30 V V DS -30V /-5A Dual 2P Power MOSFET 51.8 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 81.4 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant -5 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested ... See More ⇒
8.1. Size:265K sino
sm4803dsk.pdf 
SM4803DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 30V/10A, D2 D2 RDS(ON)= 13m (max.) @ VGS= 10V RDS(ON)= 17m (max.) @ VGS= 4.5V S1 Reliable and Rugged G1 S2 G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8 100% UIS Tested D1 D1 D2 D2 Applications G1 G2 Power Management in Notebook Computer, Portable Equi... See More ⇒
9.1. Size:269K sino
sm4802dsk.pdf 
SM4802DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 D1 30V/11.2A, D2 D2 RDS(ON)= 9m (max.) @ VGS= 10V RDS(ON)= 12m (max.) @ VGS= 4.5V S1 Reliable and Rugged G1 S2 G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8 100% UIS Tested D1 D1 D2 D2 Applications G1 G2 Power Management in Notebook Computer, Portable Equ... See More ⇒
9.2. Size:269K sino
sm4805dsk.pdf 
SM4805DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 30V/6A, D1 D2 D2 RDS(ON)= 21m (max.) @ VGS= 10V RDS(ON)= 30m (max.) @ VGS= 4.5V S1 Reliable and Rugged G1 S2 G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8 100% UIS Tested D1 D1 D2 D2 Applications G1 G2 Power Management in Notebook Computer, Portable Equipm... See More ⇒
9.3. Size:264K sino
sm4804dsk.pdf 
SM4804DSK Dual N-Channel Enhancement Mode MOSFET Features Pin Description D1 30V/8A, D1 D2 D2 RDS(ON)= 17m (max.) @ VGS= 10V RDS(ON)= 23m (max.) @ VGS= 4.5V S1 Reliable and Rugged G1 S2 G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP-8 100% UIS Tested D1 D1 D2 D2 Applications G1 G2 Power Management in Notebook Computer, Portable Equipm... See More ⇒
9.4. Size:723K globaltech semi
gsm4804.pdf 
40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4804, N-Channel enhancement mode 40V/16A,RDS(ON)= 48m @VGS=10V MOSFET, uses Advanced Trench Technology to 40V/10A,RDS(ON)= 70m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ... See More ⇒
9.5. Size:283K silicon standard
ssm4800agm.pdf 
SSM4800AGM N-Channel Enhancement Mode Power Mosfet PRODUCT SUMMARY D Simple Drive Requirement BVDSS 30V D D Low On-resistance RDS(ON) 18m D Fast Switching Characteristic ID 9.4A G RoHS Compliant S S SO-8 S DESCRIPTION D The Advanced Power MOSFETs from Silicon Standard provide the designer with the best combination of fast switching, G ruggedized device design, low on... See More ⇒
9.6. Size:532K huashuo
hsm4805.pdf 
HSM4805 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM4805 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 12 m gate charge for most of the synchronous buck converter applications. ID -9 A The HSM4805 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function r... See More ⇒
9.7. Size:28499K cn sps
sm4800.pdf 
SM4800 Dual N-Channel Enhancement Mode Field Effect Transistor P-Channel Enhancement-Mode MOSFET Description The SM4800 uses advanced trench technology to 1 8 S2 D2 provide excellent RDS(ON) and low gate charge. The 2 7 G2 D2 two MOSFETs make a compact and efficient switch 3 6 S1 D1 and synchronous rectifier combination for use in 4 5 G1 D1 buck converters. SOIC-8 General F... See More ⇒
9.8. Size:753K cn sps
sm4807prl.pdf 
SM4807PRL -30V /-6A Dual 2P Power MOSFET C C03C C -30V /-6A Dual 2P Power MOSFET 6C03C General Description -30 V V DS -30V /-6A Dual 2P Power MOSFET 40.6 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 63.8 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant -6 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested ... See More ⇒
9.9. Size:768K cn sps
sm480t9rl.pdf 
SM480T9RL 30V /25A Single N Power MOSFET H N03H N 30V /25A Single N Power MOSFET 25N03H General Description 30 V V DS 30V /25A Single N Power MOSFET 23.1 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 36.3 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant 25 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested ... See More ⇒
9.10. Size:832K cn sps
sm4805prl.pdf 
SM4805PRL -30V /-9A Dual 2P Power MOSFET C C03C C -30V /-9A Dual 2P Power MOSFET 9C03C General Description -30 V V DS -30V /-9A Dual 2P Power MOSFET 2.1 m RDS(on),TYP@VGS=10V Very low on-resistance RDS(on) @ VGS=4.5 V 3.3 m RDS(on),TYP@VGS=4.5 Pb-free lead plating; RoHS compliant -9 A ID Tape and reel Part ID Package Type Marking infomation 100% UIS Tested 100% Rg Tested SM... See More ⇒
Detailed specifications: SM4496PRL, SM454AT9RL, SM4606, SM4614BPRL, SM4616PRL, SM4620PRL, SM4627PRL, SM4800, IRF530, SM4805PRL, SM4807PRL, SM480T9RL, SM4812PRL, SM4818, SM4828APRL, SM4840PRL, SM4842PRL
Keywords - SM4803APRL MOSFET specs
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