SM4818 MOSFET. Datasheet pdf. Equivalent
Type Designator: SM4818
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.4 V
|Id|ⓘ - Maximum Drain Current: 8 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15 nC
trⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 110 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.019 Ohm
Package: SOP8
SM4818 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SM4818 Datasheet (PDF)
sm4818.pdf
SM481830V Dual N-channel MOSFETP-Channel Enhancement-Mode MOSFETDescription Top ViewThe SM4818 uses advanced trench technology to provideS2 1 8 D2excellent RDS(ON) and low gate charge. This device isG2 D227suitable for use as a load switch or in PWM applications.S1 3 6 D1G1 4 5 D1SOIC-8General Features DDVDS30V (at VGS=10V) 8AID (at VGS=10V)
ssm4816sm.pdf
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sm4812prl.pdf
SM4812PRL30V /6A Dual 2N Power MOSFET C B03C B 30V /6A Dual 2N Power MOSFET 6B03CGeneral Description 30 VV DS30V /6A Dual 2N Power MOSFET 29.4 mRDS(on),TYP@VGS=10VVery low on-resistance RDS(on) @ VGS=4.5 V 46.2 mRDS(on),TYP@VGS=4.5Pb-free lead plating; RoHS compliant 6 AIDTape and reelPart ID Package Type Markinginfomation100% UIS Tested100% Rg TestedSM4812PR
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