All MOSFET. FCH47N60NF Datasheet

 

FCH47N60NF MOSFET. Datasheet pdf. Equivalent

Type Designator: FCH47N60NF

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 368 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 28.9 A

Maximum Junction Temperature (Tj): 150 °C

Maximum Drain-Source On-State Resistance (Rds): 0.065 Ohm

Package: TO247_TO3P_TO3PF

FCH47N60NF Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FCH47N60NF Datasheet (PDF)

1.1. fch47n60n.pdf Size:599K _fairchild_semi

FCH47N60NF
FCH47N60NF

May 2010 SupreMOSTM FCH47N60N N-Channel MOSFET 600V, 47A, 62m? Features Description • RDS(on) = 51.5m? ( Typ.)@ VGS = 10V, ID =23.5 A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge ( Typ.Qg =115nC) process that differentiates it from preceding multi-epi based technologies. By utilizing thi

1.2. fch47n60nf.pdf Size:295K _fairchild_semi

FCH47N60NF
FCH47N60NF

January 2011 SupreMOSTM FCH47N60NF N-Channel MOSFET, FRFET 600V, 47A, 65m? Features Description • RDS(on) = 57.5m? (Typ.) @ VGS = 10V, ID = 23.5A The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling • Ultra Low Gate Charge (Typ. Qg = 121nC) process that differentiates it from preceding multi-epi based technologies. By

 2.1. fch47n60 f133.pdf Size:286K _upd-mosfet

FCH47N60NF
FCH47N60NF

February TM SuperFET FCH47N60_F133 Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.058Ω balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=210nC) lower gate charge performance. This advanced technology has

2.2. fch47n60f.pdf Size:197K _fairchild_semi

FCH47N60NF
FCH47N60NF

February TM SuperFET FCH47N60F _F133 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. RDS(on) = 0.062? balance mechanism for outstanding low on-resistance and • Fast Recovery Type ( trr = 240ns) lower gate charge performance. • Ultra Low Gate Cha

 2.3. fch47n60f f085.pdf Size:382K _fairchild_semi

FCH47N60NF
FCH47N60NF

October 2013 FCH47N60F_F085 N-Channel MOSFET 600V, 47A, 75mΩ D Features Typ rDS(on) = 66mΩ at VGS = 10V, ID = 47A Typ Qg(tot) = 190nC at VGS = 10V, ID = 47A G UIS Capability RoHS Compliant TO-247 Qualified to AEC Q101 G S D S Description SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For curren

2.4. fch47n60.pdf Size:286K _fairchild_semi

FCH47N60NF
FCH47N60NF

February TM SuperFET FCH47N60_F133 Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.058? balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=210nC) lower gate charge performance. This advanced technology has been tailored

 2.5. fch47n60 f085.pdf Size:381K _fairchild_semi

FCH47N60NF
FCH47N60NF

November 2013 FCH47N60_F085 N-Channel MOSFET 600V, 47A, 79mΩ D Features Typ rDS(on) = 64mΩ at VGS = 10V, ID = 47A Typ Qg(tot) = 187nC at VGS = 10V, ID = 47A G UIS Capability RoHS Compliant TO-247 Qualified to AEC Q101 G S D S Description SuperFETTM is Fairchild’s proprietary new generation of high voltage MOSFETs utilizing an advanced charge balance For curren

2.6. fch47n60 f133 fca47n60 fca47n60 f109.pdf Size:1062K _fairchild_semi

FCH47N60NF
FCH47N60NF

December 2008 TM SuperFET FCH47N60_F133 / FCA47N60 / FCA47N60_F109 600V N-Channel MOSFET Features Description • 650V @TJ = 150°C SuperFETTM is, Fairchild’s proprietary, new generation of high voltage MOSFET family that is utilizing an advanced charge • Typ. Rds(on)=0.058? balance mechanism for outstanding low on-resistance and • Ultra low gate charge (typ. Qg=210nC) lower gate charge

Datasheet: FCH35N60 , STU666S , FCH47N60 , STU664S , FCH47N60F , STU660 , FCH47N60N , STU650S , IRFP4332 , STU630S , FCH76N60N , STU624S , FCH76N60NF , STU622S , FCI25N60N_F102 , STU618S , FCI7N60 .

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