SMIRF18N50T8TL Datasheet. Specs and Replacement

Type Designator: SMIRF18N50T8TL

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 256 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 18 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 85 nS

Cossⓘ - Output Capacitance: 225 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.35 Ohm

Package: TO247

SMIRF18N50T8TL substitution

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SMIRF18N50T8TL datasheet

 4.1. Size:1558K  cn sps
 smirf18n50.pdf pdf_icon

SMIRF18N50T8TL

SMIRF18N50 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 18A SMIRF18N50 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 500V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.35 (VGS=10V, ID=9A) on-state resistance, provide superior... See More ⇒

 8.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF18N50T8TL

SMIRF16N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6 (VGS=10V, ID=8A) on-state resistance, provide superior ... See More ⇒

 8.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF18N50T8TL

SMIRF12N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75 (VGS=10V, ID=6A) on-state resistance, provide superior... See More ⇒

 8.3. Size:1202K  cn sps
 smirf10n65.pdf pdf_icon

SMIRF18N50T8TL

SMIRF10N65 30V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 10A SMIRF10N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 1.0 (VGS=10V, ID=5A) on-state resistance, provide superior ... See More ⇒

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Detailed specifications: SMIRF12N65T2TL, SMIRF13N50T1TL, SMIRF13N50T2TL, SMIRF16N65T1TL, SMIRF16N65T2TL, SMIRF16N65T8TL, SMIRF18N50T1TL, SMIRF18N50T2TL, EMB04N03H, SMIRF20N65T1TL, SMIRF20N65T2TL, SMIRF20N65T8TL, SMIRF4N65T1TL, SMIRF4N65T2TL, SMIRF4N65TBRL, SMIRF4N65T9RL, SMIRF5N65T1TL

Keywords - SMIRF18N50T8TL MOSFET specs

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