All MOSFET. SMIRF20N65T1TL Datasheet

 

SMIRF20N65T1TL Datasheet and Replacement


   Type Designator: SMIRF20N65T1TL
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 239 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 250 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: TO220
 

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SMIRF20N65T1TL Datasheet (PDF)

 4.1. Size:1649K  cn sps
 smirf20n65.pdf pdf_icon

SMIRF20N65T1TL

SMIRF20N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 20A IRF20N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.5(VGS=10V, ID=10A) on-state resistance, provide superior s

 9.1. Size:1604K  cn sps
 smirf16n65.pdf pdf_icon

SMIRF20N65T1TL

SMIRF16N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 16A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.6(VGS=10V, ID=8A) on-state resistance, provide superior

 9.2. Size:1313K  cn sps
 smirf12n65.pdf pdf_icon

SMIRF20N65T1TL

SMIRF12N6530V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFETDescription ID 12A SMIRF12N65 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 650V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson max 0.75(VGS=10V, ID=6A) on-state resistance, provide superior

 9.3. Size:1247K  cn sps
 smirf8n60.pdf pdf_icon

SMIRF20N65T1TL

SMIRF8N6030V /36A Single N Power MOSFET N-Channel Enhancement Mode Power MOSFET Description ID 8A SMIRF8N60 is an N-channel enhancement mode power MOS field effect transistor. The improved VDSS 600V planar stripe cell and the improved guard ring terminal have been especially tailored to minimize Rdson(max) 1.2(VGS=10V, ID=4A) on-state resistance, provide superior switchi

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Datasheet: SMIRF13N50T1TL , SMIRF13N50T2TL , SMIRF16N65T1TL , SMIRF16N65T2TL , SMIRF16N65T8TL , SMIRF18N50T1TL , SMIRF18N50T2TL , SMIRF18N50T8TL , MMD60R360PRH , SMIRF20N65T2TL , SMIRF20N65T8TL , SMIRF4N65T1TL , SMIRF4N65T2TL , SMIRF4N65TBRL , SMIRF4N65T9RL , SMIRF5N65T1TL , SMIRF5N65T2TL .

History: 2SK3914-01

Keywords - SMIRF20N65T1TL MOSFET datasheet

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